Substrate processing apparatus, and thermocouple

ABSTRACT

A thermocouple includes: a temperature measuring portion configured to measure an internal temperature of a reaction tube; a main body portion provided therein with a wire which constitutes the temperature measuring portion; and a cushioning portion attached to the main body portion at least in the vicinity of the temperature measuring portion, wherein the thermocouple is fixed to an outer surface of the reaction tube in a state in which the thermocouple makes contact with the reaction tube through the cushioning portion.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. patent application Ser. No.16/685,643, filed Nov. 15, 2019, which is a divisional of U.S. patentapplication Ser. No. 16/046,682, filed Jul. 26, 2018, which is issued asU.S. Pat. No. 10,684,174 on Jun. 16, 2020, which is a divisional of U.S.patent application Ser. No. 15/052,137, filed Feb. 24, 2016, whichissued as U.S. Pat. No. 10,228,291 on Mar. 12, 2019, which is based uponand claims the benefit of priority from Japanese Patent Application Nos.2015-035680, filed on Feb. 25, 2015 and 2016-021846, filed on Feb. 8,2016, the entire contents of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a substrate processing apparatus, anda thermocouple.

BACKGROUND

It is known that a semiconductor manufacturing apparatus is available asone example of a substrate processing apparatus and further that avertical apparatus is available as one example of the semiconductormanufacturing apparatus. As the substrate processing apparatus of thiskind, there is known a substrate processing apparatus which includes aboat as a substrate support member provided within a reaction tube andconfigured to hold substrates (wafers) in multiple stages and which isconfigured to process the substrates held by the boat at a predeterminedtemperature in a process chamber defined within the reaction tube.

There is disclosed a technique in which a plurality of wafers is held bya boat and is inserted into a reaction tube. In this state, films areformed on the wafers by supplying a precursor gas to the wafers disposedwithin the reaction tube, while maintaining the internal temperature ofthe reaction tube at a predetermined temperature based on temperatureinformation detected by a temperature sensor as a detection meansinstalled within the reaction tube.

However, in the configuration mentioned above, the temperature sensor isinstalled within the reaction tube in which film formation is performed.Thus, there may be a case where a film is formed on a quartz-madeprotective tube for protecting a temperature detection part.Accordingly, a problem is posed in that the protective tube is damagedunder the influence of a thermal stress and may become a particlegeneration source.

SUMMARY

The present disclosure provides some embodiments of a configuration inwhich a thermocouple is installed outside a reaction tube rather thaninside the reaction tube.

According to one aspect of the present disclosure, there is provided athermocouple, including:

a temperature measuring portion configured to measure an internaltemperature of a reaction tube;

a main body portion provided therein with a wire which constitutes thetemperature measuring portion; and

a cushioning portion attached to the main body portion at least in thevicinity of the temperature measuring portion,

wherein the thermocouple is fixed to an outer surface of the reactiontube in a state in which the thermocouple makes contact with thereaction tube through the cushioning portion.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic configuration view of a vertical processingfurnace of a substrate processing apparatus suitably employed in anembodiment of the present disclosure, in which a portion of theprocessing furnace is shown in a vertical cross section.

FIG. 2 is a partial schematic configuration view of the verticalprocessing furnace of the substrate processing apparatus suitablyemployed in the embodiment of the present disclosure, in which areaction tube is shown in a horizontal cross section.

FIG. 3 is a schematic configuration view of a controller of thesubstrate processing apparatus suitably employed in the embodiment ofthe present disclosure, in which a control system of the controller isshown in a block diagram.

FIG. 4 is a schematic configuration view of a thermocouple attached tothe reaction tube of the substrate processing apparatus suitablyemployed in a first embodiment of the present disclosure.

FIGS. 5A and 5B are detail views in which a temperature measuringportion of the thermocouple suitably employed in the embodiment of thepresent disclosure is enlarged.

FIG. 6 is a view illustrating one example of a cover suitably employedin the first embodiment of the present disclosure.

FIG. 7 is a view illustrating one example of a thermal insulatorsuitably employed in the first embodiment of the present disclosure.

FIG. 8A is a schematic view illustrating a state in which thethermocouple is being attached to the outside of the reaction tubesuitably employed in the first embodiment of the present disclosure, andFIG. 8B is a schematic view illustrating the internal shape ofprotective members after the thermocouple is attached to the outside ofthe reaction tube suitably employed in the first embodiment of thepresent disclosure.

FIG. 9 is a schematic configuration view of the vertical processingfurnace of the substrate processing apparatus suitably employed in theembodiment of the present disclosure, in which a portion of theprocessing furnace is shown in a vertical cross section when thethermocouple is attached to the outside of the reaction tube.

FIG. 10 is a schematic view illustrating a state in which thethermocouple is being installed in a furnace opening portion suitablyemployed in the embodiment of the present disclosure.

FIG. 11 is a schematic view showing a comparison of temperaturecharacteristics available when a thermocouple of a related art isinstalled inside the reaction tube and when the thermocouple suitablyemployed in the embodiment of the present disclosure is attached to theoutside of the reaction tube.

FIG. 12A is a schematic view illustrating a state in which athermocouple is being attached to the outside of a reaction tubesuitably employed in another embodiment of the present disclosure, andFIG. 12B is a horizontal cross-sectional view illustrating the internalshape of a protective member after the thermocouple is attached to theoutside of the reaction tube suitably employed in another embodiment ofthe present disclosure.

FIG. 13 is a view illustrating details of a protective tube suitablyemployed in the embodiment of the present disclosure.

FIG. 14 is a schematic configuration view of a thermocouple attached toa reaction tube of a substrate processing apparatus suitably employed ina second embodiment of the present disclosure.

FIG. 15 is a view illustrating one example of a protective membersuitably employed in the second embodiment of the present disclosure.

FIG. 16 is a schematic configuration view of a thermocouple attached toa reaction tube of a substrate processing apparatus suitably employed ina third embodiment of the present disclosure.

FIG. 17A is a view illustrating one example of a protective member forthe protection of a ceiling suitably employed in the third embodiment ofthe present disclosure, and FIG. 17B is a schematic cross-sectional viewillustrating a state available after attaching the protective member forthe protection of a ceiling suitably employed in the third embodiment ofthe present disclosure.

FIG. 18 is a view illustrating one example of a protective member forthe protection of a sidewall suitably employed in the third embodimentof the present disclosure.

FIG. 19A is a schematic configuration view of a substrate processingapparatus suitably employed in a fourth embodiment of the presentdisclosure, illustrating a state available after thermocouples areattached to the outside of a reaction tube, and FIG. 19B is a schematicconfiguration view of the substrate processing apparatus suitablyemployed in the fourth embodiment of the present disclosure,illustrating a state available after the thermocouples are attached tothe outside of the reaction tube and are covered with protectivemembers.

FIG. 20 is a schematic configuration view of a vertical processingfurnace of a substrate processing apparatus suitably employed in anembodiment of the present disclosure, in which a portion of theprocessing furnace is shown in a vertical cross section when thethermocouple attachment position (height) is improved.

FIGS. 21A and 21B are sectional views illustrating the states in whichthe thermocouples suitably employed in the second embodiment and thethird embodiment are attached to the reaction tube.

FIGS. 22A and 22B are schematic configuration views of the thermocouplessuitably employed in the second embodiment and the third embodiment, inwhich the attachment states of a main body portion and a protectiveportion are shown in a schematic diagram.

FIG. 23A shows a cross section taken along line A-A in FIG. 22B, FIG.23B shows a cross section taken along line B-B in FIG. 22B and FIG. 23Cshows a cross section taken along line C-C in FIG. 22B.

DETAILED DESCRIPTION First Embodiment of the Present Disclosure

A first embodiment of the present disclosure will now be described withreference to FIGS. 1 and 2. The substrate processing apparatus accordingto the present disclosure is configured as one example of asemiconductor manufacturing apparatus for use in manufacturing asemiconductor device.

Referring first to FIG. 1, a processing furnace 202 includes a heater207 as a heating part (heating mechanism). The heater 207 has acylindrical shape. Although not shown, the heater 207 is configured toinclude a heater wire and an insulating material. The lower portion ofthe heater 207 is supported on a heater base (not shown) as a holdingplate. Thus, the heater 207 is vertically installed. Furthermore, theheater 207 functions as an activating mechanism (exciting part) whichthermally activates (excites) a process gas.

A reaction tube 203 of a single tube structure, which constitutes areaction vessel (process vessel), is disposed inside the heater 207 in aconcentric relationship with the heater 207. The reaction tube 203 ismade of a heat-resistant material such as, for example, quartz (SiO₂) orsilicon carbide (SiC). The reaction tube 203 is formed in a roofed shapewith the lower end portion thereof opened and the upper end portionthereof closed by a flat wall. The top end portion (hereinafter alsoreferred to as a ceiling portion) of the reaction tube 203 is formedthick from the viewpoint of securing strength. The sidewall of thereaction tube 203 includes a cylinder portion 209 formed in acylindrical shape and a gas supply area 222 and a gas exhaust area 224provided on an outer surface of the cylinder portion 209. A processchamber 201 is formed inside the cylinder portion 209 of the reactiontube 203. The process chamber 201 is configured to process wafers 200 assubstrates. Furthermore, the process chamber 201 is configured toaccommodate a boat 217 capable of holding the wafers 200 which arearranged in a horizontal posture and in multiple stages along a verticaldirection.

The gas supply area 222 is formed such that a convex portion protrudesoutward from one sidewall of the cylinder portion 209. An outer wall ofthe gas supply area 222 is formed outside one sidewall as a portion ofthe outer surface of the cylinder portion 209 at a size larger than theouter diameter of the cylinder portion 209 and in a concentricrelationship with the cylinder portion 209. The gas supply area 222 isformed in a roofed shape with the lower end portion thereof opened andthe upper end portion thereof closed by a flat wall. Nozzles 340 a to340 c to be described later are accommodated within the gas supply area222 so as to extend along the longitudinal direction thereof (along theup-down direction). Gas supply slits 235 to be described later areformed in a boundary wall 254 which is a wall that constitutes aboundary between the gas supply area 222 and the cylinder portion 209.The boundary wall 254 is one sidewall of the cylinder portion 209. Theouter surface of the boundary wall 254 constitutes a side surfaceportion that faces the gas supply area 222.

The gas exhaust area 224 is formed on the other sidewall of the cylinderportion 209 opposed to one sidewall on which the gas supply area 222 isformed. The gas exhaust area 224 is disposed such that a region of theprocess chamber 201, which accommodates the wafers 200, is interposedbetween the gas supply area 222 and the gas exhaust area 224. The gasexhaust area 224 is formed such that a convex portion protrudes outwardfrom the other sidewall of the cylinder portion 209 opposed to onesidewall on which the gas supply area 222 is formed. An outer wall ofthe gas exhaust area 224 is formed outside the other sidewall as aportion of the outer surface of the cylinder portion 209 at a sizelarger than the outer diameter of the cylinder portion 209 and in aconcentric relationship with the cylinder portion 209. The gas exhaustarea 224 is formed in a roofed shape with the lower end portion and theupper end portion thereof closed by flat walls. Gas exhaust slits 236 tobe described later are formed in a boundary wall 252 which is a wallthat constitutes a boundary between the gas exhaust area 224 and thecylinder portion 209. The boundary wall 252 is a portion of the cylinderportion 209. The outer surface of the boundary wall 252 constitutes aside surface portion that faces the gas exhaust area 224.

The lower end portion of the reaction tube 203 is supported by acylindrical manifold 226 serving as a furnace opening portion. Themanifold 226 is made of metal such as, for example, nickel alloy orstainless steel, or is made of a heat-resistant material such as, forexample, quartz (SiO₂) or silicon carbide (SiC). A flange is formed inthe upper end portion of the manifold 226. The lower end portion of thereaction tube 203 is installed on and supported by the flange. A sealmember 220 such as an O-ring or the like is interposed between theflange and the lower end portion of the reaction tube 203, therebykeeping the interior of the reaction tube 203 in an air-tight state.

A seal cap 219 is air-tightly installed in the lower end opening portionof the manifold 226 through a seal member 220 such as an O-ring or thelike, thereby air-tightly closing the lower end opening portion of thereaction tube 203, namely the opening portion of the manifold 226. Theseal cap 219 is made of metal such as, for example, nickel alloy orstainless steel, and is formed in a disc shape. The seal cap 219 may beconfigured such that the outer surface thereof is covered with aheat-resistant material such as quartz (SiO₂) or silicon carbide (SiC).

A boat support stand 218 which supports the boat 217 is installed on theseal cap 219. The boat support stand 218 is made of a heat-resistantmaterial such as, for example, quartz or silicon carbide. The boatsupport stand 218 functions as a thermal insulation part and becomes asupport body which supports the boat 217. The boat 217 is erected on theboat support stand 218. The boat 217 is made of a heat-resistantmaterial such as, for example, quartz or silicon carbide. The boat 217includes a bottom plate (not shown) fixed to the boat support stand 218and a top plate disposed above the bottom plate. A plurality of posts isinstalled between the bottom plate and the top plate. A plurality ofwafers 200 is held on the boat 217. The wafers 200 are stacked inmultiple stages in a tube axis direction of the reaction tube 203 andare supported by the posts of the boat 217 while maintaining ahorizontal posture with predetermined gaps left therebetween and thecenters thereof aligned with one another.

A boat rotating mechanism 267 which rotates the boat 217 is installed atthe opposite side of the seal cap 219 from the process chamber 201. Arotary shaft of the boat rotating mechanism 267, which penetrates theseal cap 219, is connected to the boat support stand 218. The wafers 200are rotated by rotating the boat 217 through the boat support stand 218with the boat rotating mechanism 267. The seal cap 219 is verticallymoved up and down by the boat elevator 115 as an elevating mechanisminstalled outside the reaction tube 203. Thus, the boat 217 can beloaded into or unloaded from the process chamber 201.

Nozzle support portions 350 a to 350 c which support the nozzles 340 ato 340 c are installed in the manifold 226. The nozzle support portions350 a to 350 c are bent in an L-like shape and are installed so as topenetrate the manifold 226. In the present embodiment, there areinstalled three nozzle support portions 350 a to 350 c. The nozzlesupport portions 350 a to 350 c are made of a material such as, forexample, nickel alloy or stainless steel. Gas supply pipes 310 a to 310c which supply gases into the reaction tube 203 are respectivelyconnected to one end portions of the nozzle support portions 350 a to350 c existing at the side of the reaction tube 203. Furthermore, thenozzles 340 a to 340 c are respectively connected to the other endportions of the nozzle support portions 350 a to 350 c. The nozzles 340a to 340 c are made of a heat-resistant material such as, for example,quartz or silicon carbide.

The nozzles 340 a to 340 c are installed along the longitudinaldirection of the gas supply area 222 (along the up-down direction) so asto extend from the lower portion toward the upper portion within the gassupply area 222. Each of the nozzles 340 a to 340 c is configured as anI-shaped long nozzle. Gas supply holes 234 a to 234 c which supply gasestherethrough are respectively formed on the side surfaces of the nozzles340 a to 340 c. The gas supply holes 234 a to 234 c are respectivelyopened toward the center of the reaction tube 203. As described above,three nozzles 340 a to 340 c are installed in the gas supply area 222and are configured to supply plural kinds of gases into the processchamber 201.

In the processing furnace 202 described above, the boat 217 supported bythe boat support stand 218 is inserted into the process chamber 201 in astate in which the wafers 200 to be subjected to batch processing arestacked on the boat 217 in multiple stages. The wafers 200 inserted intothe process chamber 201 are heated to a predetermined temperature by theheater 207.

A first process gas supply source which supplies a first process gas, amass flow controller (MFC) 320 a which is a flow rate controller (flowrate control part) and a valve 330 a which is an opening/closing valve,are respectively installed in the gas supply pipe 310 a sequentiallyfrom the upstream side. A second process gas supply source whichsupplies a second process gas, a mass flow controller (MFC) 320 b whichis a flow rate controller (flow rate control part) and a valve 330 bwhich is an opening/closing valve, are respectively installed in the gassupply pipe 310 b sequentially from the upstream side. A third processgas supply source which supplies a third process gas, a mass flowcontroller (MFC) 320 c which is a flow rate controller (flow ratecontrol part) and a valve 330 c which is an opening/closing valve, arerespectively installed in the gas supply pipe 310 c sequentially fromthe upstream side. Gas supply pipes 310 d to 310 f which supply an inertgas are respectively connected to the gas supply pipes 310 a to 310 c atthe downstream side of the valves 330 a to 330 c. Mass flow controllers(MFC) 320 d to 320 f which are flow rate controllers (flow rate controlparts) and valves 330 d to 330 f which are opening/closing valves, arerespectively installed in the gas supply pipes 310 d to 310 fsequentially from the corresponding upstream sides.

A first process gas supply system is mainly configured by the gas supplypipe 310 a, the MFC 320 a and the valve 330 a. The first process gassupply system may include the first process gas supply source, thenozzle support portion 350 a and the nozzle 340 a. Furthermore, a secondprocess gas supply system is mainly configured by the gas supply pipe310 b, the MFC 320 b and the valve 330 b. The second process gas supplysystem may include the second process gas supply source, the nozzlesupport portion 350 b and the nozzle 340 b. Moreover, a third processgas supply system is mainly configured by the gas supply pipe 310 c, theMFC 320 c and the valve 330 c. The third process gas supply system mayinclude the third process gas supply source, the nozzle support portion350 c and the nozzle 340 c. As used herein, the term “process gas” mayrefer to a case of including only a first process gas, a case ofincluding only a second process gas, a case of including only a thirdprocess gas, or a case of including the first process gas, the secondprocess gas and the third process gas. Furthermore, as used herein, theterm “process gas supply system” may refer to a case of including only afirst process gas supply system, a case of including only a secondprocess gas supply system, a case of including only a third process gassupply system, or a case of including the first process gas supplysystem, the second process gas supply system and the third process gassupply system.

An exhaust port 230 is formed at a lower portion of the gas exhaust area224. The exhaust port 230 is connected to an exhaust pipe 232. A vacuumpump 246 as a vacuum exhaust device is connected to the exhaust pipe 232via a pressure sensor 245 as a pressure detector (pressure detectionportion), which detects the internal pressure of the process chamber201, and an auto pressure controller (APC) valve 244 as a pressureregulator (pressure regulation part). The vacuum pump 246 is configuredto perform vacuum exhaust so that the internal pressure of the processchamber 201 becomes a predetermined pressure (vacuum level). At thedownstream side of the vacuum pump 246, the exhaust pipe 232 isconnected to an exhaust gate processing device (not shown) or the like.The APC valve 244 is an opening/closing valve which can perform or stopthe vacuum exhaust of the interior of the process chamber 201 by openingor closing the valve and which can regulate the internal pressure of theprocess chamber 201 by adjusting a valve opening degree and adjusting aconductance. An exhaust system is mainly configured by the exhaust pipe232, the APC valve 244 and the pressure sensor 245. The exhaust systemmay include the vacuum pump 246.

As illustrated in FIG. 2, a below-described temperature sensor 1 as atemperature detector (hereinafter also referred to as a “thermocouple”)is installed outside the reaction tube 203. By adjusting the electricpower supplied to the heater 207 based on temperature informationdetected by the temperature sensor 1, the internal temperature of theprocess chamber 201 is adjusted to have a desired or specifiedtemperature distribution.

As illustrated in FIG. 3, a controller 280, which is a control part(control means), may be configured as a computer including a centralprocessing unit (CPU) 121 a, a random access memory (RAM) 121 b, amemory device 121 c, and an I/O port 121 d. The RAM 121 b, the memorydevice 121 c and the I/O port 121 d are configured to exchange data withthe CPU 121 a via an internal bus 121 e. An input/output device 122formed of, for example, a touch panel or the like, is connected to thecontroller 280.

The memory device 121 c is configured by, for example, a flash memory, ahard disc drive (HDD), or the like. A control program for controllingoperations of a substrate processing apparatus or a process recipe, inwhich a sequence or condition of substrate processing to be describedlater is written, is readably stored in the memory device 121 c. Theprocess recipe functions as a program for causing the controller 280 toexecute each sequence in the substrate processing procedure, which willbe described later, to obtain a predetermined result. Hereinafter, theprocess recipe and the control program will also be generally and simplyreferred to as a “program.” When the term “program” is used herein, itmay refer to a case of including only a process recipe, a case ofincluding only a control program, or a case of including both theprocess recipe and the control program. The RAM 121 b is configured as amemory area (work area) in which a program or data read by the CPU 121 ais temporarily stored.

The I/O port 121 d is connected to the MFCs 320 a to 320 f, the valves330 a to 330 f, the pressure sensor 245, the APC valve 244, the vacuumpump 246, the heater 207, the temperature sensor (thermocouple) 1, theboat rotating mechanism 267, the boat elevator 115, and the like.

The CPU 121 a is configured to read the control program from the memorydevice 121 c and to execute the same. The CPU 121 a is also configuredto read the process recipe from the memory device 121 c according to aninput of an operation command from the input/output device 122. The CPU121 a is configured to, according to contents of the process recipe thusread, control the flow rate adjusting operation of various kinds ofgases performed by the MFCs 320 a to 320 f, the opening/closingoperation of the valves 330 a to 330 f, the opening/closing operation ofthe APC valve 244, the pressure regulating operation performed by theAPC valve 244 based on the pressure sensor 245, the start/stop operationof the vacuum pump 246, the temperature adjusting operation performed bythe heater 207 based on the temperature sensor 1, the operation ofrotating the boat 217 with the boat rotating mechanism 267 and adjustingthe rotation speed of the boat 217, the operation of moving the boat 217up and down with the boat elevator 115, and the like.

The controller 280 may be configured by installing into a computer theaforementioned program stored in an external memory device 123 (forexample, a magnetic tape, a magnetic disc such as a flexible disc or ahard disc, an optical disc such as a CD or a DVD, a magneto-optical discsuch as an MO, or a semiconductor memory such as a USB memory or amemory card). The memory device 121 c or the external memory device 123is configured as a non-transitory computer-readable recording medium.Hereinafter, the memory device 121 c and the external memory device 123will also be generally and simply referred to as a “recording medium.”When the term “recording medium” is used herein, it may refer to a caseof including only the memory device 121 c, a case of including only theexternal memory device 123, or a case of including both the memorydevice 121 c and the external memory device 123. In addition, theprogram may be provided to the computer using a communication means suchas the Internet or a dedicated line without having to use the externalmemory device 123.

Next, the shape of the reaction tube 203 will be described withreference to FIGS. 1 and 2.

As illustrated in FIG. 2, inner walls 248 and 250, each of which dividethe internal space of each of the gas supply area 222 and the gasexhaust area 224 into a plurality of spaces, are formed within the gassupply area 222 and the gas exhaust area 224. The inner walls 248 and250 are made of the same material as the reaction tube 203, for example,a heat-resistant material such as quartz (SiO₂) or silicon carbide(SiC). In the present embodiment, each of the gas supply area 222 andthe gas exhaust area 224 includes two inner walls which divide theinternal space of each of the gas supply area 222 and the gas exhaustarea 224 into three spaces.

The two inner walls 248 for dividing the interior of the gas supply area222 are installed to divide the gas supply area 222 over a rangeextending from the lower end side to the upper end side thereof, therebyforming three isolated spaces. The nozzles 340 a to 340 c arerespectively installed in the respective spaces of the gas supply area222. Since the respective nozzles 340 a to 340 c are installed in theindependent spaces due to the existence of the inner walls 248, it ispossible to prevent the process gases supplied from the respectivenozzles 340 a to 340 c from being mixed within the gas supply area 222.With this configuration, it is possible to suppress mixing of theprocess gases, formation of thin films and generation of byproductswithin the gas supply area 222. The inner walls 248 may be installed todivide the gas supply area 222 over a range extending from the lower endportion to the upper end portion thereof, thereby forming three isolatedspaces.

The two inner walls 250 for dividing the interior of the gas exhaustarea 224 are installed to divide the gas exhaust area 224 over a rangeextending from the lower end side to the upper end side thereof, therebyforming three isolated spaces. The inner walls 250 may be installed todivide the gas exhaust area 224 over a range extending from the lowerend side to the upper end portion thereof, thereby forming threeisolated spaces. If the outer diameters of the outer walls of the gassupply area 222 and the gas exhaust area 224 are set to have the samedimension, there is provided a merit in that it is possible to reduce adead space generated between the heater 207 and the outer walls of thegas supply area 222 and the gas exhaust area 224. The cross-sectionalareas of gas flow paths of the gas supply area 222 and the gas exhaustarea 224 may be set to become equal to each other. The cross-sectionalareas of gas flow paths of the respective spaces within the gas supplyarea 222 may be set to become equal to the cross-sectional areas of gasflow paths of the respective spaces within the gas exhaust area 224,which are opposed to the respective spaces within the gas supply area222.

The inner walls 250 within the gas exhaust area 224 are formed to extendfrom the upper end portion of a ceiling of the gas exhaust area 224 to aposition higher than the upper end portion of the exhaust port 230existing at the lower end side of the gas exhaust area 224. A singlespace is formed over a region extending from the position higher thanthe upper end portion of the exhaust port 230 existing at the lower endside of the gas exhaust area 224 to the lower end portion of the gasexhaust area 224. The gases flowing through the respective spaces of thegas exhaust area 224 divided by the inner walls 250 are merged in thesingle space existing in front of the exhaust port 230 and are exhaustedfrom the exhaust port 230.

The inner walls 248 within the gas supply area 222 are formed to extendfrom a ceiling of the gas supply area 222 to the upper portion of thelower end portion of the reaction tube 203. Specifically, the lower endportions of the inner walls 248 are formed to extend to the lower sideof the upper end portion of an opening portion. The lower end portionsof the inner walls 248 are formed in a region existing at the upper sideof the lower end portion of the reaction tube 203 and existing at thelower side of the upper end portions of the nozzle support portions 350a to 350 c. The length of the inner walls 248 within the gas supply area222 is shorter than the length of the reaction tube 203 and is longerthan the length of the boundary wall 254. Furthermore, the inner walls248 within the gas supply area 222 are longer than the inner walls 250within the gas exhaust area 224.

The gas supply holes 234 a to 234 c of the nozzles 340 a to 340 c may beformed in alignment with the central regions of the vertical widths ofthe respective gas supply slits 235 so as to correspond, one by one, tothe respective gas supply slits 235. For example, when there are formedtwenty five gas supply slits 235, twenty five gas supply holes 234 a,twenty five gas supply holes 234 b and twenty five gas supply holes 234c may be formed. That is to say, the gas supply slits 235 and the gassupply holes 234 a to 234 c may be formed in the same number as thewafers 200. By employing this slit configuration, process gas streamsparallel to the wafers 200 can be formed on the wafers 200.

Furthermore, the gas exhaust slits 236 extending in the circumferentialdirection are formed in the gas exhaust area 224. It is thereforepossible to perform exhaust without disturbing the process gas streamsflowing on the wafers 200. In the present embodiment, the gas exhaustslits 236 are formed in a horizontally elongated shape. Thus, there isno possibility that concentrated process gas streams are formed near theexhaust side. It is possible to straighten the streams on the wafers 200and to uniformly supply the process gases.

As illustrated in FIG. 2, the thermocouple 1 used as a control-purposethermocouple (control-purpose TC) is attached to the outer side of thereaction tube 203 (the cylinder portion 209) by a cover 2 as aprotective member. While not shown in the drawings, the cover 2 isformed of a quartz member to be described later. In the presentembodiment, the thermocouple 1 is attached to the outer side of theprocess chamber 201 and is installed so as to face the heater 207 as aheating part. Accordingly, it is possible to solve the problem (delay oftemperature responsiveness) which is posed when the thermocouple 1 isinstalled inside the reaction tube 203. Since the thermocouple 1according to the present embodiment is fixed to the reaction tube 203 bythe cover 2, it is possible to suppress the risk of the thermocouple 1itself being damaged due to a disaster such as an earthquake or thelike. While only one thermocouple 1 is shown in FIG. 2, there may beprovided a plurality of thermocouples 1. A cushioning member to bedescribed later may be installed between the thermocouple 1 and thereaction tube 203. While the thermocouple 1 illustrated in FIG. 2 isinstalled on the sidewall of the reaction tube 203, the thermocouple 1may be installed in the ceiling portion of the reaction tube 203 as willbe described later.

Next, the thermocouple 1 as a temperature detection part will bedescribed with reference to FIGS. 4, 5A, 5B and 13. As illustrated inFIG. 4, the thermocouple 1 is configured to include a temperaturemeasuring portion 11 (16) configured to measure the internal temperatureof the reaction tube 203, an insulation pipe 12 as a main body portionprovided therein with a thermocouple wire 14 which constitutes thetemperature measuring portion, a protective tube 13 connected to themain body portion 12 at the lower side of the temperature detection partand configured to protect the thermocouple wire 14, and a connector 15as an acquisition portion connected to the thermocouple wire 14 andconfigured to acquire the temperature measured by the temperaturemeasuring portion. The thermocouple 1 is based on the aforementionedconfiguration.

The entirety of the thermocouple 1 is not covered with a quartz-madeprotective tube which has been a cause of generation of particles in therelated art. The vicinity of the temperature measuring portion iscovered with the insulation pipe 12 as a main body portion (made of, forexample, alumina). The diameter of the insulation pipe 12 having acylindrical shape is about 4 mm to 6 mm. Hollow holes for allowing thethermocouple wire 14 to pass therethrough are formed at four points inthe insulation pipe 12. The thermocouple wire 14 passes through thehollow holes. The distal end portion (hereinafter also referred to as atemperature measuring point) as a contact point of the thermocouple wire14 as the temperature measuring portion protrudes from at least theinsulation pipe 12. As mentioned above, the temperature measuringportion 11 (16) for sensing a temperature is not covered with aquartz-made protective tube. Thus, it becomes easy to directly sensethermal energy. That is to say, the sensitivity of the thermocouple 1 isimproved. The temperature measuring portion 11 (16) is installed at thedistal end of the thermocouple wire 14. In the present embodiment, thetemperature measuring portion 11 (16) is divided into two zones, namelya thermocouple distal end upper zone 11 as a first temperature measuringportion and a thermocouple distal end lower zone 16 as a secondtemperature measuring portion.

Specifically, as illustrated in FIG. 5A, the insulation pipe 12 isconfigured to include a cutout portion formed by cutting a portion ofthe distal end portion thereof in the circumferential direction. Thefirst temperature measuring portion 11 is disposed in the cutoutportion. The portion hatched in FIG. 5A substantially corresponds to thecutout portion. Alumina cement 17 as an adhesive agent is spread on thecutout portion so as to bond the first temperature measuring portion 11to the inner surface of the insulation pipe 12. That is to say, thefirst temperature measuring portion 11 is fixed to the inner surface ofthe insulation pipe 12 by the bonding force of the alumina cement 17. Asillustrated in FIG. 5B, a halfway cutout portion formed by cutting aportion of a halfway portion of the insulation pipe 12 in thecircumferential direction is formed in the halfway portion of theinsulation pipe 12. The second temperature measuring portion 16 isdisposed in the halfway cutout portion. The portion hatched in FIG. 5Bsubstantially corresponds to the halfway cutout portion. Alumina cement17 is spread on the halfway cutout portion so as to bond the secondtemperature measuring portion 16 to the inner surface of the insulationpipe 12. That is to say, the second temperature measuring portion 16 isfixed to the inner surface of the insulation pipe 12 by the bondingforce of the alumina cement 17.

Furthermore, the protective tube 13 (made of, for example, quartz) isinstalled under the insulation pipe 12 (the thermocouple 1). Theprotective tube 13 is installed in the furnace opening portion 226. Inthe present embodiment, in order to install the protective tube 13 inthe furnace opening portion 226, the insulation pipe 12 is installed tolinearly extend in the longitudinal direction of the reaction tube 203and the protective tube 13 is formed in an L-like shape. One of themerits of this configuration is as follows. The insulation pipe 12 isoften made of a hard-to-bend material such as alumina or the like.Therefore, instead of the insulation pipe 12, the protective tube 13made of quartz is disposed in the vicinity of the furnace openingportion 226. This makes it easy to process the protective tube 13. Theprotective tube 13 is formed such that the outer diameter of one endportion of the protective tube 13, to which the insulation pipe 12 isattached, becomes smaller than the outer diameter of the other endportion of the protective tube 13 (to which the insulation pipe 12 isnot attached). In FIG. 13, the protective tube 13 is illustrated indetail. The protective tube 13 includes three portions, namely aconnection portion 13 a connected to the insulation pipe 12, a bondingportion 13 b on which the alumina cement 17 as an adhesive agent iscoated to fix the insulation pipe 12 to the protective tube 13, and aprotective portion 13 c formed in an L-like shape to attach theprotective tube 13 to the furnace opening portion 226. The innerdiameter of the connection portion 13 a is set to become smaller thanthe inner diameter of the protective portion 13 c. That is to say, theprotective tube 13 is formed such that the inner diameter of one endportion (the inner diameter of the connection portion 13 a) of theprotective tube 13, to which the insulation pipe 12 is attached, becomessmaller than the inner diameter of the other end portion (the innerdiameter of the protective portion 13 c) of the protective tube 13 (towhich the insulation pipe 12 is not attached). The inner diameter of theconnection portion 13 a is kept substantially constant so as to define aregion in which at least the insulation pipe 12 is inserted into andinstalled in the protective tube 13. The protective tube 13 is formedsuch that the inner diameter of the region, in which the insulation pipe12 is installed, becomes smaller than the inner diameter of a regionother than the region in which the insulation pipe 12 is installed.Furthermore, the protective tube 13 is formed such that the outerdiameter of the region, in which the insulation pipe 12 is installed,becomes smaller than the outer diameter of a region other than theregion in which the insulation pipe 12 is installed. This makes itpossible to enlarge the space defined within the protective tube 13 (theprotective portion 13 c). The thermocouple 1 has a characteristic ofextending in the longitudinal direction due to thermal expansion.However, the thermocouple 1 is playable due to the existence of thespace defined within the protective tube 13 (the protective portion 13c). It is therefore possible to suppress the breakage of thethermocouple 1. In the protective tube 13, an opening as the bondingportion 13 b is formed in a halfway portion of one end portion to whichthe insulation pipe 12 is attached. Use of the opening makes it possibleto spread the alumina cement 17 so as to adhere to the outer surface ofthe insulation pipe 12 and the inner surface of the connection portion13 a. By spreading the alumina cement 17, it is possible to reliably fixthe insulation pipe 12 to the protective tube 13. Particularly, if thetemperature measuring portion is position-shifted when detecting atemperature, the controllability of the internal temperature of theprocess chamber 201 may be adversely affected and the temperaturereproducibility may be deteriorated. This may lead to a big problem inthat it becomes impossible to form predetermined films on the wafers200. By reliably fixing the insulation pipe 12 to the protective tube 13in the aforementioned manner, it is possible to suppress occurrence ofthis problem. The opening may be opened toward the side toward which theother end portion of an L-shape of the protective tube 13 extends. Thismakes it possible to improve the workability when spreading the aluminacement 17.

The thermocouple wire 14 is connected to the connector 15 outside thefurnace opening portion 226. Temperature data are output from theconnector 15 to a temperature controller not shown in the drawings.Furthermore, an opening may also be formed in the other end portion ofthe protective tube 13, namely in the halfway portion existing at theside at which the thermocouple wire 14 is connected to the connector 15.Use of this opening makes it possible to spread the alumina cement 17 soas to adhere to the outer surface of the thermocouple wire 14 and theinner surface of the protective tube 13. By doing so, it is possible toallow the thermocouple 1 to play in response to thermal expansion.Furthermore, it becomes easy to fix the connector 15 or the like. Thismakes it possible to suppress occurrence of a problem of the connector15 being removed or a problem of the thermocouple wire 14 being broken.

The basic configuration of the thermocouple 1 installed on the sidewallof the reaction tube 203 remains the same in the second to fourthembodiments to be described later, although the outward configuration ofthe thermocouple 1 may vary due to the difference in the position orlocation in which the temperature measuring portion 11 (16) isinstalled. Thus, if the configuration of the thermocouple 1 remains thesame, descriptions thereof will be omitted herein below.

FIG. 6 illustrates the quartz-made cover 2 according to the presentembodiment. Clamping portions 2 a are formed in the upper and lower endportions of the cover 2. The width of the clamping portions 2 a issubstantially equal to the diameter of the insulation pipe 12. Theinsulation pipe 12 is inserted to the clamping portions 2 a. This makesit possible to perform the positioning of the thermocouple 1. Whenfixing the thermocouple 1, a semi-cylindrical space is formed in thecover 2. In addition to the thermocouple 1, a below-described thermalinsulator 3 may be inserted into the semi-cylindrical space. If thethermocouple 1 is moved from the interior of the reaction tube 203 tothe outside thereof, the temperature measuring point (the temperaturemeasuring portion in the present embodiment) of the thermocouple 1 comesclose to a heater wire. Thus, the temperature increasing/decreasingcharacteristic may be changed. For that reason, in order to make itdifficult for the temperature measuring point of the thermocouple 1 toreceive thermal energy from the heater wire, there is provided aconfiguration in which the thermocouple 1 can be covered with the cover2 and the below-described thermal insulator 3.

FIG. 7 illustrates one example of the thermal insulator 3 suitablyemployed in the present embodiment. The heater 207 is divided into aplurality of regions (zones). Thus, it is necessary to change the amountof heat applied to the wafers 200 on a zone-by-zone basis. For thatreason, the thermal insulator 3 is configured such that the thickness ofthe thermal insulator 3 can be changed on a zone-by-zone basis. If thethermal insulator 3 is made thick, the temperature of the thermocouple 1is difficult to increase. Thus, the output from the heater 207 becomeslarger. For that reason, if the temperature increasing characteristic ofthe heater 207 is high, the thermal insulator 3 may be omitted. Sincethe temperature of the wafers 200 is rapidly increased by the radiationheat generated from the heater 207, it is not necessary to adjust thetemperature increasing speed to become fast using the thermal insulator3.

However, in the case of using a rapid cooling mechanism provided in avertical apparatus, a cooling air passes through between the reactiontube 203 and the cover 2. The thermocouple disposed between the reactiontube 203 and the cover 2 indicates the temperature of the cooling air.It is therefore necessary to install a thermal insulator at the upstreamside of the air flow in order to cut off the cooling air. In thisregard, descriptions will be made later.

Next, the attachment of the thermocouple 1 to the reaction tube 203 willbe described with reference to FIGS. 8A and 8B.

In the present embodiment, the thermocouple 1 is attached to the outsideof the reaction tube 203 using the cover 2. As illustrated in FIG. 8A,pins 23 prepared in advance are disposed on the outer surface of thereaction tube 203. Holes (fixing holes) are prepared in advance in thecover 2 so that the holes engage with the pins 23. In the presentembodiment, the pins 23 are made of quartz. Specifically, the pins 23and the holes formed in the cover 2 are respectively four in number. Thecover 2 is fixed at four points by bringing the fixing holes intoengagement with the pins 23. The reason for employing such a hangingstructure is to make sure that the thermocouple wire 14 of the firsttemperature measuring portion 11 and the second temperature measuringportion 16 is not broken by the thermal expansion and contractionthereof. Specifically, by employing the hanging structure, the thermalexpansion direction of the thermocouple wire 14 is limited to the groundsurface direction. Thus, there is no variation in the extension of thethermocouple wire 14. This eliminates the breakage risk of thethermocouple wire 14. In the present embodiment, the cover 2 and thepins 23 are used as a first fixing jig for fixing the thermocouple 1 tothe reaction tube 203. This structure holds true in all the full covers2 which will be described later.

As can be seen in FIG. 8B illustrating a state in which the pins 23 havebeen brought into engagement with the holes and the cover 2 has beenfixed to the reaction tube 203 so as to suspend from the reaction tube203, the first temperature measuring portion 11 (the distal end of thethermocouple wire 14) is disposed at the center of the cover 2.Similarly, although not clear in FIG. 8B, the second temperaturemeasuring portion 16 is also disposed at the center of the cover 2. Inthe present embodiment, the temperature measuring portions are providedat two points. Thus, the covers 2 as first fixing jigs are prepared inthe same number (two) as the temperature measuring portions.

As illustrated in FIG. 8B, the thermal insulator 3 is disposed in thecylindrical space defined in the cover 2 (in the lower portion of thecover 2). This is to restrain the thermocouple 1 from being affected bythe coolant which cools the heater 207 disposed to face the cover 2.Specifically, if the coolant for rapid cooling is supplied to the heater207, due to the hanging structure of the cover 2, the coolant for rapidcooling is also supplied to the first temperature measuring portion 11(or the second temperature measuring portion 16) as a temperaturemeasuring part. For that reason, it may be considered that the firsttemperature measuring portion 11 (or the second temperature measuringportion 16) for detecting the internal temperature of the reaction tube203 performs heater-control using the temperature of the coolant. Thus,the thermal insulator 3 is installed in the lower portion of the cover2, thereby suppressing the influence of the coolant and suppressing theerroneous detection of the first temperature measuring portion 11 (orthe second temperature measuring portion 16). Furthermore, the firsttemperature measuring portion 11 (or the second temperature measuringportion 16) is disposed at the center of the cover 2 in view of theinfluence of the coolant. The thermal insulator 3 may be included in thefirst fixing jig.

As illustrated in FIG. 9, the heater 207 of the vertical apparatus isdivided into a plurality of zones and is controlled on a zone-by-zonebasis. Accordingly, the number of the temperature measuring portions 11(16) of the thermocouple 1 need to be equal to the number of the zonesof the heater 207. However, due to its structure, the thermocouple 1according to the present embodiment has only two temperature measuringportions corresponding to two zones. Thus, if a heater has two or morezones, a plurality of thermocouples 1 is installed. For example, if thenumber of heater zones is four, two thermocouples 1 are installed. Ifthe number of heater zones is five, three thermocouples 1 are installed.

As illustrated in FIG. 9, the thermocouple 1 attached to the outside ofthe reaction tube 203 and the heater 207 as a heating part, areconfigured to face each other. The heater 207 is divided into fourtemperature control zones (a U zone, a CU zone, a CL zone and an Lzone). Heater thermocouples 24 are installed in the respective zones.

The heater 207 is disposed so as to surround the reaction tube 203 andis configured to heat a plurality of wafers 200 held on the boat 217existing within the reaction tube 203 to a predetermined temperature.

In FIG. 10, there is illustrated a configuration in which thethermocouple 1 is attached to the furnace opening portion 226 by a jigfor attaching the thermocouple (thermocouple attaching jig) 4 as asecond fixing jig. The jig 4 is made of quartz. As described above, thethermocouple 1 is attached to a plurality of points including thereaction tube 203 and the furnace opening portion 226 by the firstfixing jig and the second fixing jig. With this configuration, it iseventually possible to hold the thermocouple 1 at two or more points.This makes it possible to reduce the risk of the thermocouple 1 beingbroken by an earthquake or the like. For example, the thermocouple 1 hasthe strength capable of withstanding an earthquake intensity of about300 Gal.

FIG. 11 is a graph illustrating changes of temperatures which arerespectively measured by the temperature measuring portion of thethermocouple (wafer TC) attached to the surface of the wafer 200, thetemperature measuring portion of the thermocouple 1 (external TC) of thepresent embodiment attached to the outside of the reaction tube 203, andthe temperature measuring portion of the thermocouple of related art(internal TC) attached to the inside of the reaction tube 203, when theinternal temperature of the processing furnace 202 is increased from 200degrees C. to 600 degrees C. In this graph, the vertical axis indicatesthe temperature and the horizontal axis indicates the time.

If the thermocouple 1 of the present embodiment is moved from theinterior of the reaction tube 203 to the outside thereof, thetemperature measuring point of the thermocouple 1 comes close to aheater wire. Thus, the temperature increasing/decreasing characteristicis changed. This is because the thermocouple 1 disposed outside thereaction tube 203 comes close to the heater 207 and because theattenuation of radiation heat from the reaction tube 203 remain small.It is well-known through experiments or the like that in the case of aheater having a high temperature increasing characteristic, thetemperature increasing speed of the wafer 200 is higher than thetemperature increasing speed of the thermocouple 1 disposed inside thereaction tube 203.

As shown in FIG. 11, when the internal temperature of the processingfurnace 202 is increased from 200 degrees C. to 600 degrees C. (duringthe time period of about 8 minutes from the measurement start time), thetemperature increasing characteristic of the wafer 200 is similar to thetemperature increasing characteristic of the thermocouple 1 installedoutside the reaction tube 203. However, it can be noted that thetemperature increasing characteristic of the thermocouple 1 installedinside the reaction tube 203 is shifted downward. Thus, it can beclearly understood that in the case of a heater having a hightemperature increasing characteristic, it is advantageous to install thethermocouple 1 outside the reaction tube 203 in order for thetemperature increasing characteristic of the thermocouple 1 to comeclose to the temperature increasing characteristic of the wafer 200.

As shown in FIG. 11, when the temperature characteristics availableafter increasing the temperature to 600 degrees C. are compared, it canbe noted that the temperature characteristic of the wafer 200 isidentical with the temperature characteristic of the thermocouple 1(external TC) installed outside the reaction tube 203. Checking theerror from the preset temperature (600 degrees C. in the presentembodiment), it can be clearly noted that it is advantageous to installthe thermocouple 1 outside the reaction tube 203. Furthermore, as can beseen in FIG. 11, the thermocouple 1 (internal TC) installed inside thereaction tube 203 fails to reach the preset temperature (600 degrees C.)even after 20 minutes are elapsed from the measurement start time. Incontrast, the temperature measured by the thermocouple 1 installedoutside the reaction tube 203 converges nearly to the preset temperature(600 degrees C.) after 10 minutes.

As shown in FIG. 11, when the internal temperature of the processingfurnace 202 is increased from 200 degrees C. to 600 degrees C., thetemperature characteristic of the wafer 200 and the temperaturecharacteristic of the thermocouple 1 (external TC) of the presentembodiment installed outside the reaction tube 203 are similar to eachother. In particular, the time required in converging to 600 degrees C.(the time required in stabilizing the temperature) remains substantiallythe same. Furthermore, the temperature at the time of convergence to 600degrees C. (or the error from the preset temperature) remainssubstantially the same. Therefore, as compared with a case where atemperature is detected by the thermocouple 1 (internal TC) installedinside the reaction tube 203, it is possible to shorten the timerequired in increasing the temperature from a standby temperature to afilm forming temperature and in stabilizing the increased temperature atthe film forming temperature, for example, in a substrate processingprocess. Thus, the improvement of throughput can be expected. Since thetemperature at the time of convergence to the preset temperature (600degrees C.) remains substantially the same, the improvement of asubstrate quality can be expected.

Next, descriptions will be made on the overview of the operation of thesubstrate processing apparatus according to the present disclosure. Thesubstrate processing apparatus is controlled by the controller 280.

The boat 217 holding a predetermined number of wafers 200 is insertedinto the reaction tube 203. The reaction tube 203 is air-tightly closedby the seal cap 219. Within the air-tightly closed reaction tube 203,the wafers 200 are heated and maintained at a predetermined temperature.A process gas is supplied into the reaction tube 203. The wafers 200 aresubjected to a heat treatment such as heating or the like.

In a heat treatment, for example, a film forming process according tothe present embodiment, an SiN film is formed on the wafer 200 byperforming, a predetermined number of times (once or more), a cyclewhich non-simultaneously performs: a step of supplying an HCDS gas tothe wafer 200 accommodated within the process chamber 201; a step ofremoving the HCDS gas (residual gas) from the interior of the processchamber 201; a step of supplying an NH₃ gas to the wafer 200accommodated within the process chamber 201; and a step of removing theNH₃ gas (residual gas) from the interior of the process chamber 201. Theprocessing conditions are, for example, as follows.

Temperature of wafer 200: 100 to 700 degrees C. (specifically 200 to 630degrees C., 600 degrees C. in the present embodiment)

Internal pressure of process chamber: 1 to 4,000 Pa (specifically 10 to1,332 Pa)

Supply flow rate of HCDS gas: 1 to 2,000 sccm (specifically 1 to 500sccm)

Supply flow rate of NH3 gas: 100 to 10,000 sccm

Supply flow rate of N₂ gas: 100 to 10,000 sccm

Thickness of SiN film: 0.2 to 10 nm

In the subject specification, for the sake of convenience, the filmforming sequence may be indicated as follows. This indication will beused in the modifications and other embodiments to be described later.

HCDS→NH₃)×n⇒SiN

The term “substrate” used herein is synonymous with the term “wafer”.

Wafer Charging and Boat Loading

If a plurality of wafers 200 is charged to the boat 217 (wafercharging), the boat 217 is loaded into the process chamber 201 by a boatelevator (boat loading). At this time, the seal cap 219 air-tightlycloses (seals) the lower end portion of the reaction tube 203 through anO-ring.

Pressure Regulation and Temperature Adjustment

The interior of the process chamber 201, namely the space in which thewafers 200 exist, is evacuated into a predetermined pressure (vacuumlevel) by the vacuum pump 246. At this time, the internal pressure ofthe process chamber 201 is measured by the pressure sensor 245. The APCvalve 244 is feedback-controlled based on the pressure information thusmeasured. The vacuum pump 246 is kept activated at least until theprocessing of the wafers 200 is completed.

The wafers 200 accommodated within the process chamber 201 are heated toa predetermined temperature by the heater 207. At this time, the stateof supplying electric power to the heater 207 is feedback-controlledbased on the temperature information detected by the temperature sensor1, so that the process chamber 201 has a predetermined temperaturedistribution. The heating of the interior of the process chamber 201 bythe heater 207 is continuously performed at least until the processingof the wafers 200 is completed.

Furthermore, the rotation of the boat 217 and the wafers 200 by therotating mechanism 267 is started. As the boat 217 is rotated by therotating mechanism 267, the wafers 200 are rotated. The rotation of theboat 217 and the wafers 200 by the rotating mechanism 267 iscontinuously performed at least until the processing of the wafers 200is completed.

Film Forming Process

If the internal temperature of the process chamber 201 is stabilized ata predetermined processing temperature, the following two steps, namelysteps 1 and 2, are sequentially performed.

Step 1

At this step, an HCDS gas is supplied to the wafers 200 accommodatedwithin the process chamber 201.

The valves 330 b and 330 e are opened to allow the HCDS gas to flowthrough the gas supply pipe 310 b. The flow rate of the HCDS gas isadjusted by the MFC. The HCDS gas is supplied into the process chamber201 via the nozzle 340 b and is exhausted from the exhaust pipe 232. Atthis time, the HCDS gas is supplied to the wafer 200. At the same time,the valves 330 a and 330 c are opened to allow an N₂ gas to flow throughthe gas supply pipes 310 a and 310 c. The flow rate of the N₂ gas isadjusted by the MFC. The N₂ gas is supplied into the process chamber 201together with the HCDS gas and is exhausted from the exhaust pipe 232.By supplying the HCDS gas to the wafer 200, a silicon (Si)-containinglayer as a first layer is formed on the outermost surface of the wafer200.

After the first layer is formed, the valve 330 b is closed to stop thesupply of the HCDS gas. At this time, while keeping the APC valve 244opened, the interior of the process chamber 201 is evacuated by thevacuum pump 246. The HCDS gas remaining within the process chamber 201,which has not reacted or which has contributed to the formation of thefirst layer, is removed from the interior of the process chamber 201. Atthis time, while keeping the valves 330 a and 330 c opened, the supplyof the N₂ gas into the process chamber 201 is maintained. The N₂ gasacts as a purge gas. This makes it possible to effectively remove thegas remaining within the process chamber 201 from the interior of theprocess chamber 201.

In this operation, the gas remaining within the process chamber 201 maynot be completely removed and the interior of the process chamber 201may not be completely purged. If the amount of the gas remaining withinthe process chamber 201 is small, an adverse effect may not be generatedat step 2, which will be subsequently performed. The flow rate of the N₂gas supplied into the process chamber 201 need not be made large. Forexample, the amount of the N₂ gas to be supplied into the processchamber 201 may be substantially equal to the volume of the reactiontube 203 (the process chamber 201) such that a purge operation can beperformed without causing an adverse effect at step 2. By not completelypurging the interior of the process chamber 201 in this way, it ispossible to shorten the purge time and to improve the throughput. It isalso possible to suppress the consumption of the N₂ gas to a necessaryminimum level.

Step 2

After step 1 is completed, an NH₃ gas is supplied to the wafers 200accommodated within the process chamber 201, namely the first layerformed on the wafer 200. The NH₃ gas is thermally activated and suppliedto the wafer 200.

At this step, the opening/closing control of the valves 330 a and 330 dis executed by a procedure similar to the procedure of theopening/closing control of the valves 330 b and 330 e executed atstep 1. The flow rate of the NH₃ gas is adjusted by the MFC. The NH₃ gasis supplied into the process chamber 201 via the nozzle 340 a and isexhausted from the exhaust port 232. At this time, the NH₃ gas issupplied to the wafer 200. The NH₃ gas supplied to the wafer 200 reactswith at least a portion of the first layer, namely the Si-containinglayer, which is formed on the wafer 200 at step 1. Thus, the first layeris thermally nitrided in an non-plasma manner and is changed (modified)to a second layer containing Si and N, namely a silicon nitride layer(SiN layer). Alternatively, at this time, a plasma-excited NH₃ gas maybe supplied to the wafer 200 to plasma-nitride the first layer, therebychanging the first layer to a second layer (SiN layer).

After the second layer is formed, the valves 330 a and 330 d are closedto stop the supply of the NH₃ gas. Then, the NH₃ gas remaining withinthe process chamber 201, which has not reacted or which has contributedto the formation of the second layer, and the reaction byproductsremaining within the process chamber 201, are removed from the interiorof the process chamber 201 by a procedure similar to that of step 1. Atthis time, similar to step 1, the gas remaining within the processchamber 201 may not be completely discharged.

Performing a Predetermined Number of Times

An SiN film having a predetermined composition and a predetermined filmthickness can be formed on the wafer 200 by performing, a predeterminednumber of times (n times), a cycle which non-simultaneously, i.e.,non-synchronously, performs steps 1 and 2 described above. Theaforementioned cycle may be repeated multiple times. That is to say, thethickness of the second layer (SiN layer) formed when performing theaforementioned cycle once may be set smaller than a predetermined filmthickness. The aforementioned cycle may be repeated multiple times untilthe thickness of the SiN film formed by laminating the second layer (SiNlayer) becomes equal to the predetermined film thickness.

Purge and Return to Atmospheric Pressure

After the film forming process is completed, the valves 330 e and 330 fare opened. An N₂ gas is supplied into the process chamber 201 from thegas supply pipes 310 b and 310 c and is exhausted from the exhaust pipe232. The N₂ gas acts as a purge gas. Thus, the interior of the processchamber 201 is purged, and the gas and the reaction byproducts remainingwithin the process chamber 201 are removed from the interior of theprocess chamber 201 (purge). Thereafter, the internal atmosphere of theprocess chamber 201 is substituted with an inert gas (inert gassubstitution), and the internal pressure of the process chamber 201 isreturned to an atmospheric pressure (return to atmospheric pressure).

Boat Unloading and Wafer Discharge

The seal cap 219 is moved down by the boat elevator 115 to open thelower end of the reaction tube 203. The processed wafers 200 supportedby the boat 217 are unloaded from the lower end of the reaction tube 203to the outside of the reaction tube 203 (boat unloading). Thereafter,the processed wafers 200 are discharged from the boat 217 (waferdischarge).

According to the present embodiment (the first embodiment), one or moreeffects set forth in items (a) to (i) below may be achieved.

(a) According to the present embodiment (the first embodiment), thethermocouple is disposed outside the reaction tube. Thus, there is nopossibility that the thermocouple is damaged under the influence of filmformation and particles are generated from the thermocouple. Forexample, if a thermocouple (control-purpose TC) is installed inside aprocess chamber where film formation is performed, a film is formed on aprotective tube. Consequently, the protective tube is damaged andbecomes a particle generation source. However, according to the presentembodiment, such a situation does not occur. As another example, if theinterior of a reaction tube is repeatedly brought into a vacuum stateand an atmospheric pressure state, a thermocouple (control-purpose TC)is displaced. Consequently, the thermocouple (control-purpose TC) makescontact with the reaction tube or the boat and becomes a particlegeneration source. However, according to the present embodiment, such asituation does not occur.

(b) According to the present embodiment (the first embodiment), thetemperature measuring point is covered with the protective member. Thus,the thermocouple can be held at a plurality of locations as well as thefurnace opening portion. Accordingly, the thermocouple can withstand anearthquake of a certain intensity (e.g., about 300 Gal). This eliminatesa possibility that the thermocouple is damaged.

(c) According to the present embodiment (the first embodiment), thefixing jig for fixing the thermocouple to the reaction tube is installedand the temperature measuring point of the thermocouple is covered withthe hanging structure. Thus, the direction in which the thermocouplewire is extended by thermal expansion is limited to the ground surfacedirection. This reduces the probability of breakage of the thermocouplewire.

(d) According to the present embodiment (the first embodiment), thethermocouple is disposed outside the reaction tube. Furthermore, thetemperature measuring portion is covered with only the aluminainsulation pipe instead of a quartz protective cover which has been usedin the related art to cover a control-purpose TC (L-shaped cascadethermocouple). Thus, the responsiveness of the thermocouple (thedetection accuracy of the temperature detection part) is improved andthe temperature characteristic similar to the temperature characteristicof the substrate (wafer) can be acquired. Accordingly, the temperaturecontrol function is improved.

(e) According to the present embodiment (the first embodiment), when thetemperature measuring point is covered with the quartz-made protectivemember, the thermal insulator is installed at least in the lower portionof the protective member. It is therefore possible to suppress erroneousdetection of the thermocouple 1 which may otherwise be generated due tothe inflow of a coolant. Thus, the reduction of the temperature controlfunction is suppressed.

(f) According to the present embodiment (the first embodiment), thethermocouple is moved from the interior of the reaction tube to theoutside thereof. Thus, the temperature measuring point of thethermocouple comes close to the heater wire. It is therefore possible tochange the temperature increasing/decreasing characteristic and toshorten the time required in stabilizing the temperature. This enablesthe temperature of the substrate to reach a target temperature within ashort period of time. Thus, the improvement of throughput is achieved.

(g) According to the present embodiment (the first embodiment), thethermocouple is moved from the interior of the reaction tube to theoutside thereof. Thus, the temperature measuring point of thethermocouple comes close to the heater wire. It is therefore possible toimprove the temperature increasing/decreasing characteristic and tobring the stabilized temperature close to a preset temperature. Thisenables the temperature distribution of the substrate to come close to adesired temperature distribution. Thus, the improvement of throughput isachieved.

(h) According to the present embodiment (the first embodiment), the gassupply area and the gas exhaust area are formed outside the processchamber. Thus, it is not necessary to install a nozzle, as a gas supplymeans for supplying a gas, in the process chamber. It is thereforepossible to reduce the gap between the edges of the substrates and theinner wall of the reaction tube and to significantly reduce the volumeof the reaction tube as compared with a reaction tube of related art.This makes it possible to restrain the process gas from flowing throughthe gap between the edges of the wafers and the inner wall of thereaction tube. Thus, it is possible to supply a sufficient amount ofprocess gas to between the substrates and to improve the substitutionefficiency of the process gas.

(i) According to the present embodiment (the first embodiment), theinner walls are formed in the gas supply area and the gas exhaust area.This makes it possible to make up for the strength reduction of thereaction tube which may be generated when the gas supply area and thegas exhaust area are formed outside the process chamber. It is thereforepossible to reduce the breakage risk of the reaction tube while reducingthe volume of the reaction tube.

Second Embodiment of the Present Disclosure

Next, a second embodiment will be described with reference to FIGS. 14and 15. Since the second embodiment is identical in basic configurationwith the first embodiment, only the configurations of the thermocouple 1and the cover 2 differing from those of the first embodiment will bedescribed.

The thermocouple 1 illustrated in FIG. 14 is configured to includespacers 18 (18 a, 18 b and 18 c) as cushioning portions. Otherconfigurations are identical with the configurations of the thermocouple1 described in the first embodiment. Thus, detailed descriptions of thethermocouple configurations having nothing to do with the cushioningportions 18 will be omitted.

Specifically, the thermocouple 1 as a temperature detection partemployed in the second embodiment is configured to include a temperaturemeasuring portion 11 (16) configured to measure the internal temperatureof the reaction tube 203, a main body portion 12 provided therein with awire 14 which constitutes the temperature measuring portion 11 (16), aprotective tube 13 connected to the main body portion 12 at the lowerside of the temperature detection part and configured to protect thewire 14, and an acquisition portion 15 connected to the wire 14 andconfigured to acquire the temperature measured by the temperaturemeasuring portion 11 (16). The cushioning portions 18 are installed atleast some portions of the main body portion 12. The thermocouple 1 (themain body portion 12) can be attached to the outside of the reactiontube 203 through the cushioning portions 18 (18 a and 18 b) while makingcontact with the reaction tube 203. The cushioning portions 18 areinstalled in the vicinity of the temperature measuring portions 11 and16 and in the boundary between the main body portion 12 and theprotective tube 13 along the side surface of the reaction tube 203.

As illustrated in FIG. 14, the cushioning portions 18 (18 a) are fixedby winding an alumina sleeve as a thermal insulation member around themain body portion 12 in multiple turns. Furthermore, the cushioningportions 18 (18 b) are alumina plates. When the cover 2 is fixed to thereaction tube 203, the cushioning portions 18 (18 b) are interposedbetween the main body portion 12 and the reaction tube 203. Moreover,the cushioning portion 18(18 c) is an alumina insulation pipe having ahollow cylindrical shape and is installed so as to cover the outercircumference of the main body portion 12.

As described above, the cushioning portions 18 are attached to thevicinity of the temperature measuring portion 11(16) and to the boundarybetween the main body portion 12 and the protective tube 13. The mainbody portion 12 makes contact with the reaction tube 203 through thecushioning portions 18. Thus, the temperature measuring portion 11 (16)is fixed to a position close to the reaction tube 203. It is thereforepossible to secure temperature control performance. That is to say, bybringing the temperature measuring portion 11 (16) into contact with thereaction tube 203 using the spacer 18, it is possible to reduce thetemperature variation between zones and the variation of the temperatureincreasing characteristic. Consequently, the temperature controlperformance is improved. In the meantime, an appropriate clearance ismaintained between the protective tube 13 and the reaction tube 203 bythe spacer 18. Thus, the stress applied to the protective tube 13 isrelaxed. This reduces the breakage risk of the protective tube 13.

Furthermore, the cushioning portion 18(18 a) is wound so as to have adiameter of about 10 mm. The cushioning portion 18(18 a) contributes tothe fixing of the thermocouple 1. On the other hand, the cushioningportion 18(18 c) has a diameter of 10 mm. Since the diameter of thecushioning portion 18(18 c) is set larger than the diameter (4 mm) ofthe main body portion 12 and the diameter (8 mm) of the adjoiningprotective tube 13, the cushioning portion 18(18 c) contributes to theappropriate adjustment of the clearance between the reaction tube 203and the protective tube 13. In this regard, similar to the cushioningportion 18(18 c), the cushioning portion 18(18 a) may be installed so asto surround the main body portion 12. In the present embodiment, thecushioning portion 18(18 b) is formed into an elongated plate shape soas to have a width of 8 mm, a length of 30 mm and a thickness of 4 mmand is made of alumina. The cushioning portion 18(18 b) is installed ina space formed in a below-described cover 2 with an appropriateclearance left between the cushioning portion 18(18 b) and the cover 2.In the present embodiment, the cushioning portions 18 (18 b and 18 c)are attached (fixedly secured) to the main body portion 12 so as tobecome one piece with the main body portion 12.

As illustrated in FIG. 15, a cover 2 employed in the second embodimenthas an enlarged form of the cover 2 employed in the first embodiment.Unlike the cover 2 employed in the first embodiment, the cover 2employed in the second embodiment is configured to cover not only thetemperature measuring portion 11 of the thermocouple 1 but also theentirety of the reaction tube 203. Hereinafter, the cover 2 employed inthe second embodiment may sometimes be referred to as a full cover.

The cover 2 is installed along the reaction tube 203 so as to cover(surround) at least a substrate processing region. The heater 207 as aheating part has a plurality of independent heating zones (a U zone, aCU zone, a CL zone and an L zone). The cover 2 is installed so as tocover at least one heating zone (the CU zone or the CL zone).

The cover 2 includes a distal end portion 32 as a top portion cappedwith a plate-shaped member. The plate-shaped member is attached to thecover 2 by, for example, welding, so as to become one piece with thecover 2. As illustrated in FIG. 15, the cover 2 is provided with a spaceportion 31 shown in a cross section. The thermocouple 1 can be disposedin the space portion 31. The cross-sectional area of the spacer 18(18 a)installed near the thermocouple 1 is set substantially equal to thecross-sectional area of the space portion 31. The spacer 18(18 a) isinstalled with no clearance. Thus, the thermocouple 1 is fixed so as tomake contact with the reaction tube 203. Furthermore, the spacer 18 b isfixed in advance, by an adhesive agent such as alumina cement or thelike, to the main body portion 12 within which the temperature measuringportion 11(16) of the thermocouple 1 is installed. The spacer 18 b andthe main body portion 12 are installed in the space portion 31 with apredetermined clearance left therebetween. Thus, there is no possibilitythat the thermocouple 1 is damaged due to the pressing of the cover 2.In addition, the thermocouple 1 (specifically, the main body portion 12within which the temperature measuring portion 11(16) is installed)makes contact with the reaction tube 203 through the spacer 18 b.

The full cover 2 is fixed to the reaction tube 203 in the same manner asdescribed in the first embodiment. Pins 23 prepared in advance aredisposed on the outer surface of the reaction tube 203. Holes (fixingholes) are prepared in advance in the cover 2 so that the holes engagewith the pins 23. In the present embodiment, the pins 23 are made ofquartz. Specifically, the pins 23 and the holes formed in the cover 2are respectively four in number. The cover 2 is fixed at four points bybringing the fixing holes into engagement with the pins 23.

The positions of the four pins 23 and the four fixing holes formed inthe cover 2 do not depend on the number of the temperature measuringportions 11 disposed in the space portion 31. The cover 2 as a whole isfixed at predetermined four points. The distal end portion 32 of thefull cover 2 is designed to become flush with the top portion of thereaction tube 203. In the meantime, the distance from the upper endportion to the lower end portion of the full cover 2 is designed tocover at least the substrate processing region.

By changing the design of the cover 2 of the first embodiment to thedesign of the full cover 2 of the second embodiment in this way, evenwhen supplying the coolant which cools the heater 207 disposed so as toface the cover 2, the coolant is not directly injected toward the mainbody portion 12 of the thermocouple 1. It is therefore possible tosuppress the influence on the temperature characteristic.

Similar to the thermocouple 1 according to the first embodiment, theprotective tube 13 (made of, for example, quartz) is installed below themain body portion 12 (the thermocouple 1). Since the configuration ofthe protective tube 13 remains unchanged, descriptions will be made onthe differing portions. FIGS. 22A to 23C illustrate detail views of theprotective tube 13 of the second embodiment installed below theinsulation pipe 12.

A plurality of opening portions for allowing platinum (Pt) lines 27 topass therethrough is formed in the protective tube 13. The platinum (Pt)lines 27 are caused to pass through the clearance generated wheninstalling the cushioning portion 18 c in the main body portion 12. Forexample, as illustrated in FIGS. 23A to 23C, four platinum (Pt) lines27-1, 27-2, 27-3 and 27-4 are caused to pass through the clearancebetween the main body portion 12 and the cushioning portion 18 c and aredrawn out from an opening path for passage of the platinum (Pt) lines27, which is installed within a fixing portion 26 mounted to the openingportions. By interconnecting the platinum (Pt) lines 27, the main bodyportion 12 and the protective tube 13 are fixed to each other. Thefixing portion 26 is made of alumina and fixed to the main body portion12 by an adhesive agent or the like. Since both of the main body portion12 and the fixing portion 26 are made of alumina, the alumina cement 17is used as the adhesive agent. However, the alumina-made main bodyportion 12 (including the fixing portion 26) and the quartz-madeprotective tube 13 are connected by binding them with the platinum lines27, instead of by bonding quartz and alumina insulation pipe. Thisconfiguration does not restrict thermal expansion of alumina.

The platinum (Pt) lines 27, which has a diameter Φ of 0.3 mm, can passthrough the clearance illustrated in FIGS. 23A to 23C before theadhesive agent is dried. The space between the cushioning portion 18 cand the main body portion 12 is compacted (filled) by the adhesive agentwith no gap. In the meantime, as illustrated in FIG. 23A to 23C, theplatinum lines 27 can pass through the clearance between the protectivetube 13 and the main body portion 12. Furthermore, by fixing the fixingportion 26 to the main body portion 12 as illustrated in FIG. 23A to23C, it is possible to fix the protective tube 13 to the main bodyportion 12.

There may be a case where the protective tube 13 is broken by the stressattributable to the thermal expansion difference between the protectivetube 13 (having a small thermal expansion coefficient) and theinsulation pipe 12 and the alumina cement 17 (having a large thermalexpansion coefficient). Thus, instead of filling the adhesive agent suchas the alumina cement 17 or the like from the opening portions, the mainbody portion 12 and the protective tube 13 are fixed by the platinumlines 27. This makes it possible to prevent breakage of the protectivetube 13 attributable to the thermal expansion difference between thematerials.

According to the present embodiment, at least one of the effects of thefirst embodiment described above and effects set forth in items (j) to(n) below may be achieved.

(j) According to the present embodiment, the thermocouple includes atleast the main body portion within which the temperature measuringportion for measuring the internal temperature of the reaction tube isinstalled. The cushioning portion is installed in at least a portion ofthe main body portion. The temperature measuring portion is fixed to theoutside of the reaction tube in a state in which the temperaturemeasuring portion makes contact with the reaction tube through thecushioning portion. Thus, the thermocouple can withstand an earthquakeof certain intensity and can withstand a vibration. Accordingly, thereis no possibility that the thermocouple is damaged.

(k) According to the present embodiment, the thermocouple is configuredto detect a temperature in a state in which the main body portion havingthe temperature measuring portion mounted therein makes contact with thereaction tube through the heat insulation member. Thus, the temperatureresponsiveness is improved. In addition, it is possible to repeat thetemperature measurement. Thus, the temperature reproducibility isimproved.

(l) According to the present embodiment, only four pins and four fixingholes are used to fix the thermocouple having a plurality of temperaturemeasuring portions. Therefore, as compared with the first embodiment, itis possible to simplify the processing work of the quartz-made members(the reaction tube and the cover) and to reliably fix the thermocoupleat a low cost.

(m) According to the present embodiment, the thermocouple is fixed tothe side surface of the reaction tube by the cover so that the coolantis not directly injected to the thermocouple (the main body portion orthe temperature measuring portion). It is therefore possible to suppresserroneous detection of the internal temperature of the reaction tube andto maintain the temperature control performance.

(n) According to the present embodiment, it is possible to prevent theprotective tube (particularly, the quartz of the L-shaped portion) frombeing broken by the stress attributable to the thermal expansiondifference between the protective tube (having a small thermal expansioncoefficient) and the insulation pipe and the adhesive agent (having alarge thermal expansion coefficient).

Third Embodiment of the Present Disclosure

FIG. 16 illustrates a thermocouple 1 for controlling a temperature of aceiling of a reaction tube. As illustrated in FIG. 16, the thermocouple1 according to the third embodiment includes at least a ceilingthermocouple 1 a (hereinafter also referred to as a thermocouple 1 a)configured to control a temperature of a ceiling of a reaction tube andprovided with a temperature measuring portion 21 as a temperaturemeasuring point, a sidewall thermocouple 1 b (hereinafter also referredto as a thermocouple 1 b) configured to control a temperature of asidewall of the reaction tube, and connection portion 1 c configured tointerconnect the thermocouple 1 a and the thermocouple 1 b.

That is to say, the thermocouple 1 as a temperature detection partemployed in the third embodiment includes a thermocouple 1 a as a firstmain body portion provided with a first temperature measuring portion 21for measuring a temperature of a ceiling of a reaction tube andinstalled on the ceiling of the reaction tube, a thermocouple 1 b as asecond main body portion installed on a side surface of the reactiontube, and a connection portion 1 c configured to interconnect the firstmain body portion and the second main body portion. The firsttemperature measuring portion 21 is fixed to a central position of theceiling of the reaction tube.

Furthermore, a substrate processing apparatus provided with thethermocouple 1 employed in the third embodiment is configured to includea ceiling heater 34 as a heating part configured to heat the interior ofthe reaction tube 203, and a cover 2 as a ceiling cover installedbetween the heating part 34 and the first main body portion facing theheating part 34 and fixed to the ceiling of the reaction tube, the cover2 having a space through which the first main body portion extends.Furthermore, a pin 22 (hereinafter also referred to as a positioningpin) as a projection portion attached to the first main body portion isinserted into an opening portion formed in the ceiling cover 2. Thus,the first temperature measuring portion is fixed to the central positionof the ceiling cover 2.

As illustrated in FIG. 16, in the thermocouple 1 according to the thirdembodiment, the thermocouple 1 b for controlling the temperature of thesidewall of the reaction tube extends upward and is bent along the outersurface of the reaction tube so that the temperature measuring point 21is disposed on the ceiling of the reaction tube. Except theconfiguration installed on the ceiling, the configurations of thethermocouple 1 of the third embodiment are substantially identical withthose of the first embodiment and the second embodiment. Hereinafter,detailed descriptions of the identical configurations will be omittedand only the differing configurations will be described. For example,the thermocouple 1 b has the same configuration as that of the secondembodiment except the position in which the temperature measuringportion 11 is installed. Thus, detailed descriptions of the thermocouple1 b will be omitted. Unlike the second embodiment, the temperaturemeasuring portion 11 of the thermocouple 1 b may not be installed.

As illustrated in FIG. 16, similar to the first embodiment and thesecond embodiment, the temperature measuring portion 21 is installed atthe distal end of the thermocouple 1. Accordingly, the thermocouple 1 aincludes at least a main body portion 12 a. The thermocouple wire 14extends through an opening portion formed within the main body portion12 a.

Furthermore, the pin 22 is disposed in the thermocouple 1 a. A fixinghole as an opening portion for fixing the pin 22 is formed in theceiling cover 2 which covers the ceiling of the reaction tube 203. Thethermocouple 1 is positioned in place by the pin 22 and the fixing hole.At this time, the temperature measuring portion 21 is disposed at thecenter of the reaction tube 203 and is disposed in the central portionof the ceiling cover 2.

The main body portion 12 is not installed in the connection portion 1 cin order to absorb expansion of the wire 14 of the thermocouple 1 a.Furthermore, the connection portion 1 c is formed by winding an aluminasleeve 25 as an insulation member (insulation sleeve) around thethermocouple wire 14. Alternatively, the connection portion 1 c may besurrounded by a quartz tube or the like.

FIG. 17A illustrates a cover 2 as a ceiling cover which covers thethermocouple 1 for controlling the temperature of the ceiling of thereaction tube. A fixing hole, into which the pin 22 is inserted, isformed in the ceiling cover 2. Similar to the full cover describedabove, the ceiling cover 2 includes a space portion 31 for accommodatingthe thermocouple 1 and a lid disposed on the distal end portion 32.Similar to the covers 2 of the first embodiment and the secondembodiment, four fixing holes for fixing the ceiling cover 2 are formedin the ceiling cover 2.

As illustrated in FIG. 17B, the thermocouple 1 (the main body portion12) is configured to make direct contact with the ceiling of thereaction tube 203. Furthermore, fixing holes are also formed on theceiling of the reaction tube 203 in alignment with the fixing holes ofthe ceiling cover 2. It can be noted that the ceiling cover 2 is fixedto the ceiling of the reaction tube 203 by screws. Due to the structureof the reaction tube 203, the ceiling of the reaction tube 203 isconfigured to have a large thickness. Therefore, the fixing holes formedon the reaction tube 203 do not affect the temperature characteristic.

As illustrated in FIG. 18, the full cover 2 according to the thirdembodiment is identical in size and in configuration, such as theformation of the space portion 31 or the like, with the full cover 2 ofthe second embodiment. Descriptions will be made herein on the pointsdiffering from the full cover 2 of the second embodiment.

In the space portion 31, there is installed a clamping portion 33 whichconstitutes a through-hole through which the main body portion 12 of thethermocouple 1 extends. The clamping portion 33 is formed over the totallength of the full cover 2. The through-hole has a diametersubstantially equal to the diameter of the main body portion 12. Byfixing the full cover 2 to the reaction tube 203, the thermocouple 1 ispositioned in place.

According to the present embodiment, the thickness of the cushioningportion 18 b may be set so as to equalize the state in which thethermocouple 1 makes contact with the ceiling of the reaction tube 203and the state in which the thermocouple 1 makes contact with thesidewall of the reaction tube 203 through the cushioning portion 18 b.For example, as illustrated in FIGS. 21A and 21B, the thickness of theceiling of the reaction tube 203 is set equal to the total thickness ofthe sidewall of the reaction tube 203 and the cushioning portion 18 b.Thus, the thermocouple 1 installed on the ceiling of the reaction tube203 and the thermocouple 1 installed on the sidewall of the reactiontube 203 can detect a temperature at the same level. The thickness maybe appropriately changed depending on the material of the cushioningportion 18 b.

According to the present embodiment, at least one of the effects of thefirst embodiment and the second embodiment described above and effectsset forth in items (o) to (q) below may be achieved.

(o) According to the present embodiment, the pin 22 is installed in thethermocouple 1 a. The fixing hole for allowing the pin 22 to passtherethrough is formed in the ceiling cover 2 and the fixing holes forfixing screws are formed on the ceiling of the reaction tube 203. Thepin 22 of the thermocouple 1 a is fitted to the fixing hole of theceiling cover 2, whereby the ceiling cover 2 is positioned in place. Theceiling cover 2 is fixed to the reaction tube 203 by screws. Thus, thethermocouple 1 a is fixed to the reaction tube 203. With thisconfiguration, the thermocouple 1 can withstand an earthquake of certainintensity. Thus, there is no possibility that the thermocouple 1 isbroken.

(p) According to the present embodiment, the pin 22 of the thermocouple1 a is fitted to the fixing hole of the ceiling cover 2, whereby theceiling cover 2 is positioned in place. Consequently, the thermocouple 1a is fixed in the central position of the reaction tube 203 in a statein which the temperature measuring point 21 of the thermocouple 1 amakes contact with the reaction tube 203. With this configuration, it ispossible to accurately detect the temperature of the center of the wafer200 accommodated within the reaction tube 203.

(q) According to the present embodiment, the pin 22 of the thermocouple1 a is fitted to the fixing hole of the ceiling cover 2, whereby theceiling cover 2 is positioned in place. Consequently, the temperaturemeasuring point 21 of the thermocouple 1 a is disposed at the center ofthe ceiling cover 2. Thus, the coolant is not directly injected to thethermocouple 1 a. It is therefore possible to suppress erroneousdetection of the internal temperature of the reaction tube 203.

Fourth Embodiment of the Present Disclosure

FIGS. 19A and 19B illustrate use examples of the thermocouples employedin the third embodiment and the second embodiment (or the firstembodiment).

FIGS. 19A and 19B show a state in which three thermocouples 1 employedin the second embodiment and the third embodiment are installed on thereaction tube 203. The thermocouples 1 disposed at the opposite ends arethe thermocouples 1 employed in the second embodiment. The thermocouple1 disposed at the center is the thermocouple 1 employed in the thirdembodiment. The thermocouple 1 disposed at the center extends upward sothat the temperature measuring portion 21 is installed on the ceiling ofthe reaction tube 203. The configurations of the protective tube 13 andthe like not shown in FIGS. 19A and 19B are the same as those of thefirst embodiment to the third embodiment.

The substrate processing apparatus according to the fourth embodiment isconfigured to include: a reaction tube 203 configured to accommodate aboat 217 for holding a plurality of substrates; a first heating partconfigured to heat the substrates disposed in positions facing aplurality of independent heating zones (a U zone, a UL zone, a CL zoneand an L zone); a second heating part configured to heat the substratesdisposed in a position facing the U zone; a first thermocouple installedon a sidewall of the reaction tube 203 and configured to detect atemperature of a position facing the first heating part; a secondthermocouple including a first main body portion 1 a installed on theceiling of the reaction tube 203, a second main body portion 1 binstalled on a side surface of the reaction tube 203 and a connectionportion 1 c configured to interconnect the first main body portion 1 aand the second main body portion 1 b; a full cover 2 configured to fixthe first thermocouple and the second main body portion to the sidewallof the reaction tube 203; a ceiling cover 2 configured to fix the firstmain body portion to the ceiling of the reaction tube 203; and a controlpart configured to control at least the first heating part and thesecond heating part, based on the temperatures detected by the firstthermocouple and the second thermocouple, so that an internaltemperature of the reaction tube 203 is maintained at a predeterminedtemperature.

Furthermore, the first main body portion 1 a includes a firsttemperature measuring portion 21 configured to measure the internaltemperature of the reaction tube 203. A projection portion installed inthe first main body portion 1 a is fitted into an opening portion formedin the ceiling cover 2. Thus, the first temperature measuring portion isfixed to a central position of the ceiling of the reaction tube 203 soas to measure the temperature of the center of the substrate heated bythe second heating part. For example, as illustrated in FIG. 19A, thefirst temperature measuring portion is fixed such that the temperaturemeasuring point 21 is disposed at the center of the ceiling of thereaction tube 203 and at the center of four holes for fixing the cover2. This makes it possible to detect at least a temperature of a centralportion of the uppermost wafer 200 accommodated within the reaction tube203.

As illustrated in FIG. 19A, two thermocouples 1 employed in the secondembodiment are installed so that the height positions of the temperaturemeasuring portions 11 and 16 thereof differ from each other. Forexample, the two thermocouples 1 are respectively disposed in suchpositions as to detect the temperatures of the U zone, the UL zone, theCL zone and the L zone. The respective thermocouples 1 are fixed in astate in which the thermocouples 1 make contact with the reaction tube203 through the spacers 18. Thus, the thermocouples 1 are fixed in astate in which the temperature measuring portions 11 and 16 are disposedin close proximity to the reaction tube 203. Accordingly, it is possibleto accurately detect the internal temperature of the reaction tube 203.The temperature measuring portions 11 and 16 are covered with the fullcover 2 which will be described later.

As illustrated in FIG. 19B, the full cover 2 employed in the secondembodiment and the full cover 2 employed in the third embodiment differfrom each other in the positions of the fixing holes (the correspondingpositions of the pins 23 installed on the reaction tube 203). This isbecause, if a single-surface arrangement is used, the distance betweenthe pins 23 becomes narrow and the work efficiency grows worse. Bymaking the positions of the fixing holes differ from each other, thereis provided an effect of preventing a mistake in mounting the full cover2 employed in the second embodiment and the full cover 2 employed in thethird embodiment.

Furthermore, the full covers 2 are installed so as to cover at least theentirety of a substrate processing region (a region where product wafers200 are loaded by the boat 217). Moreover, the full covers 2 areinstalled along the reaction tube 203 so as to cover at least thesubstrate processing region and are installed so as to cover thereaction tube 203 in a facing relationship with at least a plurality ofindependent heating zones (a U zone, a CU zone, a CL zone and an Lzone).

In the case of the cover 2 employed in the first embodiment, the cover 2needs to be provided on a zone-by-zone basis. Thus, the attachment workof the cover 2 is time-consuming. According to the present embodiment,the number of pins 23 for attaching the full cover 2 is fixed to four.Thus, only one full cover 2 is installed with respect to onethermocouple. This contributes to the improvement of workability.

FIG. 20 illustrates a thermal processing furnace which makes use of aplurality of thermocouples 1 according to the present embodiment. In thepresent embodiment, a ceiling heater 34 is installed above the reactiontube 203 so as to heat the central portion of the wafer 200 held in theboat 217. The thermocouples 1 are disposed outside the ceiling of thereaction tube 203. Only one thermocouple is seen in FIG. 20 because twoother thermocouples 1 overlap with one thermocouple.

A temperature control system according to the present embodimentincludes a first temperature measuring portion installed on the ceilingof the reaction tube 203 and configured to measure the internaltemperature of the reaction tube 203, and second temperature measuringportions installed in the positions which face heating zones (a U zone,a CU zone, a CL zone and an L zone) and configured to measure theinternal temperature of the reaction tube 203. At least a first heatingpart and a second heating part are controlled, based on the temperaturesdetected by the first temperature measuring portion and the secondtemperature measuring portions, so that the internal temperature of thereaction tube 203 is maintained at a predetermined temperature.

When controlling the temperature of the U zone among the heating zones,the temperature of the centers of the substrates disposed in the U zone(or the substrate held at the uppermost side of the boat 217) isdetected by the first temperature measuring portion. The temperature ofthe edge portions of the substrates disposed in the U zone is detectedby the second temperature measuring portion. The first heating part andthe second heating part are controlled so that at least a differencebetween the temperatures detected by the first temperature measuringportion and the second temperature measuring portion falls within apredetermined range, thereby assuring that at least the temperature ofthe substrates disposed in the U zone is maintained at a predeterminedtemperature. In this way, the temperature control system is configuredto control the temperature of the substrate held at the uppermost sideof the boat 217. Thus, it is possible to improve the in-plane uniformityand the inter-pane uniformity of the substrate temperature. The ceilingof the reaction tube is made of thick quartz and has a high heatcapacity. This makes it difficult to heat and temperature-control theceiling of the reaction tube. By installing the first temperaturemeasuring portion on the ceiling of the reaction tube and monitoring thetemperature, it is possible to improve the temperature-controllabilityof the U zone.

The configuration of the thermal processing furnace according to thepresent embodiment differs from the configuration of the thermalprocessing furnace illustrated in FIG. 9 in that the ceiling heater 34is installed above the reaction tube 203 and the thermocouple 1 a isinstalled on the ceiling of the reaction tube 203. Other configurationsof the thermal processing furnace according to the present embodimentare substantially the same as the configurations illustrated in FIG. 9.Therefore, detailed descriptions thereof will be omitted. The region, inwhich the ceiling heater 34 is installed, is a sub-U zone which assiststhe heating of the U zone. Specifically, the ceiling heater 34 isconfigured to heat the wafer 200 held at the upper side of the boat 217.In this regard, the temperature measuring portion 21 of the thermocouple1 a functions as a temperature detection part configured to detect thetemperature of the sub-U zone. The temperature measuring portion 21 ofthe thermocouple 1 a directly monitors the temperature of the ceilingportion of the reaction tube. Thus, in the present embodiment, the wafer200 held at the uppermost side of the boat 217 is arranged in a positionfacing the U zone. However, the present disclosure is not limited tothis configuration. The wafer 200 held at the uppermost side of the boat217 may face the CU zone.

The height of the thermocouple 1 (the temperature measuring portion 11)and the heater thermocouple 24 for detecting the temperature of the Uzone is set substantially equal to the height of the wafer 200 held atthe uppermost side of the boat 217 accommodated within the reaction tube203. The heights need not be strictly equal to each other. A deviationof about several centimeters in the heights does not matter. Further,the height of the thermocouple 1 (the temperature measuring portion 11)and the heater thermocouple 24 for detecting the temperature of the Uzone are set to be substantially equal to the height of the ceiling ofthe reaction tube. The ceiling of the reaction tube is made of quartzthicker than other portions. Thus, improvement in temperature control ofthe ceiling of the reaction tube contributes to improvement oftemperature-controllability of wafers. The height may set to apredetermined height between the height of the wafer 200 held at theuppermost side of the boat 217 and the height of the ceiling of thereaction tube.

When heating the top wafer 200 accommodated within the reaction tube203, the peripheral portion of the top wafer 200 is first heated up andthen the central portion of the top wafer 200 is heated up. This makesit difficult to improve the temperature control performance. Thus, inthe present embodiment, as illustrated in FIG. 20, the ceiling heater 34is installed, and the temperature measuring point 21 of the ceilingthermocouple 1 a formed by extending the sidewall thermocouple 1 upwardand bending the sidewall thermocouple 1 along the outer surface of thereaction tube 203 is disposed in the vicinity of the central portion ofthe ceiling of the reaction tube 203.

Similar to the sidewall thermocouple 1, the ceiling cover 2 is disposedon the ceiling of the reaction tube 203 and is fixed to the ceiling ofthe reaction tube 203 by the positioning pin 22. Thus, the behaviors ofthe temperatures detected by the temperature measuring portion 11 fordetecting the temperature of the peripheral portion of the wafer 200 andthe temperature measuring portion 21 for detecting the temperature ofthe central portion of the wafer 200 are similar to each other. It istherefore possible to shorten the temperature recovery time requireduntil a difference between the temperatures of the peripheral portionand the central portion of the wafer 200 reaches a target temperature.

As described above, the wafer 200 held at the uppermost side of the boat217 is heated from the periphery of the wafer 200 by the heater 207 andis heated from the surface of the wafer 200 by the ceiling heater 34. Itis therefore possible to improve the uniformity of the surfacetemperature of the wafer 200.

In particular, as illustrated in FIG. 20, the in-plane uniformity isimproved by using, as a temperature control target, the wafer 200 heldat the uppermost side of the boat 217. This makes it possible to improvethe in-pane uniformity of the surface temperatures of the wafers 200held in the substrate processing region.

While not shown in the drawings, a heater may be installed under theboat 217 so that the central portion of the wafer 200 is heated at thelower end side of the reaction tube 203. However, in this case, atemperature detection part needs to be installed even under the boat217. Furthermore, the inter-plane uniformity of the temperatures of thewafers 200 as well as the in-plane uniformity of the surface temperatureof the wafer 200 can be improved by installing a heater (not shown)under the boat 217 and by using, as a temperature control target, thewafer 200 held at the lowermost side of the boat 217.

According to the present embodiment, at least one of the effects of thefirst embodiment to the third embodiment described above and effects setforth in items (r) and (s) below may be achieved.

(r) According to the present embodiment, the thermocouple installed onthe sidewall of the reaction tube and the thermocouple installed on theceiling of the reaction tube, which is configured to have the sametemperature detection sensitivity as the thermocouple installed on thesidewall of the reaction tube, are respectively fixed to the reactiontube in a state in which they make contact with the reaction tube. Asdescribed above, by disposing the thermocouples in the positions wherethe thermocouples can detect the temperatures of the peripheral portionand the central portion of the wafer, it is possible to improve thein-plane uniformity of the temperature of the wafer and to shorten therecovery time required for the temperature to converge to apredetermined temperature.

(s) According to the present embodiment, the heating of the U zone isperformed by the heater and the ceiling heater. By heating theperipheral portion and the central portion of the top wafer of the boatin this way, it is possible to improve the in-plane uniformity of thetemperature of the wafer. In addition, by disposing the thermocouples inthe positions corresponding to the peripheral portion and the centralportion of the wafer, it is possible to shorten the recovery time of thewafer in-plane temperature and to improve the productivity.

Other Embodiments of the Present Disclosure

As illustrated in FIGS. 12A and 12B, even if the reaction tube 203 is ofa large type, the thermocouple 1 can be similarly fixed to the outsideof the reaction tube 203 by preparing the cover 2 as a first fixing jigand the pins 23. In this case (in the case where the number of thewafers to be processed is 100 or more), the temperature increasing speedof the wafers 200 is slow. Thus, it is necessary to adjust the thermalinsulation effect by changing the thickness or the material of thethermal insulator 3 and to adjust the temperature increasing speed ofthe thermocouple (the control-purpose TC) 1. As the temperatureincreasing characteristic of the heater 207 becomes low or the number ofheated objects of the process chamber 201 having a dual-tube structureor the like increases, it is necessary to reduce the temperatureincreasing speed of the thermocouple (the control-purpose TC) 1 byincreasing the thickness of the thermal insulator 3 or using a materialhaving a high thermal insulation effect.

As in the related art, if the thermocouple (the control-purpose TC) 1 isdisposed between an inner tube and an outer tube of a dual-reaction-tubestructure, a film is also formed on a quartz pipe for protecting thethermocouple. Thus, there is a risk that the quartz pipe is broken dueto the film thickness. Furthermore, there is a possibility thatparticles are generated due to friction or the like. If a thermalinsulator is installed between the inner tube and the thermocouple,similar to the thermocouple (the control-purpose TC) 1 employed in thepresent embodiment, it is possible to bring the behavior of thethermocouple into conformity with the wafer temperature behavior.However, in order to install the thermal insulator 3 in the processchamber 201, it is necessary to select the thermal insulator 3 whichconforms to the wafer temperature behavior without affecting a process.This may be a cause of cost increase.

According to the present embodiment (other embodiments), the effects ofthe first embodiment to the fourth embodiment described above and one ormore effects set forth in items (1) to (3) below may be achieved.

(1) According to the present embodiment (other embodiments), even if thereaction tube 203 is of a large type (even if the number of the wafersto be processed is 100 or more), the thermocouple (the control-purposeTC) 1 according to the first embodiment can be installed outside theouter tube (corresponding to the reaction tube 203).

(2) According to the present embodiment (other embodiments), the firsttemperature measuring portion (or the second temperature measuringportion) is covered with the protective member through the thermalinsulator. Thus, the thermal insulation effect can be adjusted by thethermal insulator. With this configuration, it is possible to bring thecharacteristic of the temperature detected by the thermocouple intoconformity with the temperature increasing speed of the wafer whilesuppressing the influence of the heater.

(3) According to the present embodiment (other embodiments), even whenthere is a need to adjust the thickness of the thermal insulator, it isonly required to perform simple processing by which the protectivemember is processed and it is only necessary to attach the processedprotective member to the reaction tube 203. Thus, the thermal insulationeffect can be adjusted without incurring much cost.

In the aforementioned embodiments, the vertical semiconductormanufacturing apparatus, which is one kind of a substrate processingapparatus, has been described in detail. However, the present disclosureis not limited thereto. The present disclosure may be applied to, forexample, a horizontal semiconductor manufacturing apparatus.

In the aforementioned embodiments, descriptions have been made on a casewhere the first process gas and the second process gas are alternatelysupplied. However, the present disclosure may be applied to a case wherethe first process gas and the second process gas are simultaneouslysupplied.

In the aforementioned embodiments, descriptions have been made on anexample where the HCDS gas is used as a precursor gas. However, thepresent disclosure is not limited to this example. For example, as theprecursor gas, in addition to the HCDS gas, it may be possible to use aninorganic halosilane precursor gas such as a monochlorosilane (SiH₃Cl,abbreviation: MCS) gas, a dichlorosilane (SiH₂Cl₂, abbreviation: DCS)gas, a trichlorosilane (SiHCl₃, abbreviation: TCS) gas, atetrachlorosilane, i.e., silicon tetrachloride (SiCl₄, abbreviation:STC) gas, an octachlorotrisilane (Si₃Cl₈, abbreviation: OCTS) gas or thelike, or a halogen-group-free amino-based (amine-based) silane precursorgas such as a trisdimethylaminosilane (Si[N(CH₃)₂]₃H, abbreviation:3DMAS) gas, a tetrakisdimethylaminosilane (Si[N(CH₃)₂]₄, abbreviation:4DMAS) gas, a bisdiethylaminosilane (Si[N(C₂H₅)₂]₂H₂, abbreviation:BDEAS) gas, a bis-tert-butylaminosilane (SiH₂[NH(C₄H₉)]₂, abbreviation:BTBAS) gas or the like. Furthermore, as the precursor gas, it may bepossible to use a halogen-group-free inorganic silane precursor gas suchas a monosilane (SiH₄, abbreviation: MS) gas, a disilane (Si₂H₆,abbreviation: DS) gas, a trisilane (Si₃H₈, abbreviation: TS) gas or thelike.

In the aforementioned embodiments, descriptions have been made on anexample where the NH₃ gas is used as a reaction gas. However, thepresent disclosure is not limited to this example. For example, as thereaction gas, in addition to the NH₃ gas, it may be possible to use ahydrogen nitride-based gas such as a diazene (N₂H₂) gas, a hydrazine(N₂H₄) gas, an N₃H₈ gas or the like, or a gas containing thesecompounds. Furthermore, as the reaction gas, it may be possible to usean ethylamine-based gas such as a triethylamine ((C₂H₅)₃N, abbreviation:TEA) gas, a diethylamine ((C₂H₅)₂NH, abbreviation: DEA) gas, amonoethylamine (C₂H₅NH₂, abbreviation: MEA) gas or the like, or amethylamine-based gas such as a trimethylamine ((CH₃)₃N, abbreviation:TMA) gas, a dimethylamine ((CH₃)₂NH, abbreviation: DMA) gas, amonomethylamine (CH₃NH₂, abbreviation: MMA) gas or the like. Moreover,as the reaction gas, it may be possible to use an organichydrazine-based gas such as a trimethylhydrazine ((CH₃)₂N₂CH₃)H,abbreviation: TMH) gas or the like.

In the aforementioned embodiments, descriptions have been made on anexample where the SiN film is formed using the HCDS gas as the precursorgas and using the nitrogen (N)-containing gas (nitriding gas) such asthe NH₃ gas or the like as the reaction gas. However, the presentdisclosure is not limited to this example. Alternatively oradditionally, it may be possible to form an SiO film, an SiON film, anSiOCN film, an SiOC film, an SiCN film, an SiBN film, an SiBCN film orthe like using an oxygen (O)-containing gas (oxidizing gas) such as anoxygen (O₂) gas or the like, a carbon (C)-containing gas such as apropylene (C₃H₆) gas or the like, or a boron (B)-containing gas such asa boron trichloride (BCl₃) gas or the like. The order of supplying therespective gases may be appropriately changed. Even in the case offorming these films, it may be possible to perform film formation underthe same processing conditions as those of the aforementionedembodiments. Effects similar to those of the aforementioned embodimentsare achieved.

In the aforementioned embodiments, descriptions have been made on anexample where the silicon-based insulation film such as the SiN film orthe like is formed. However, the present disclosure is not limited tothis example. For example, the present disclosure may be suitablyapplied to a case where a film containing a metal element such astitanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium(Nb), aluminum (Al), molybdenum (Mo), tungsten (W) or the like, namely ametal-based film, is formed on a substrate.

The order of supplying the respective gases may be appropriatelychanged. Even in the case of performing this film formation, it may bepossible to perform film formation under the same processing conditionsas those of the aforementioned embodiments. Effects similar to those ofthe aforementioned embodiments are achieved.

That is to say, the present disclosure may be suitably applied to a casewhere a film containing a predetermined element such as a semiconductorelement, a metal element or the like is formed.

In the aforementioned embodiments, descriptions have been made on anexample where a film is deposited on a substrate. However, the presentdisclosure is not limited to this example. For example, the presentdisclosure may be suitably applied to a case where a substrate or a filmformed on the substrate is subjected to an oxidizing process, adiffusing process, an annealing process, an etching process or the like.Furthermore, the embodiments and modifications described above may beappropriately combined. The processing conditions used at this time maybe similar to, for example, the processing conditions of the embodimentsand modifications described above.

While the embodiments of the present disclosure have been specificallydescribed above, the present disclosure is not limited to theaforementioned embodiments but may be differently modified withoutdeparting from the spirit of the present disclosure.

ASPECTS OF PRESENT DISCLOSURE

Hereinafter, some aspects of the present disclosure will be additionallydescribed as supplementary notes.

Supplementary Note 1

According to one aspect of the present disclosure, there is provided athermocouple, including:

a temperature measuring portion configured to measure an internaltemperature of a reaction tube;

a main body portion provided therein with a wire which constitutes thetemperature measuring portion; and

a cushioning portion attached to the main body portion at least in thevicinity of the temperature measuring portion,

wherein the thermocouple is fixed to an outer surface of the reactiontube in a state in which the thermocouple makes contact with thereaction tube through the cushioning portion.

Supplementary Note 2

The thermocouple of Supplementary Note 1 may further include:

a protective tube attached to the main body portion below a positionfacing a substrate processing region configured to protect the wire,

wherein the protective tube may be configured such that an outerdiameter of one end portion of the protective tube bonded to the mainbody portion is smaller than an outer diameter of the other end portionof the protective tube.

Supplementary Note 3

In the thermocouple of Supplementary Note 2, the cushioning portion maybe installed in a boundary between the main body portion and theprotective tube, and an outer diameter of the cushioning portion may belarger than diameters of the main body portion and the protective tubeadjoining the cushioning portion.

Supplementary Note 4

According to another aspect of the present disclosure, there is provideda plate-shaped insulation member which is a cushioning member installedin the thermocouple of any one of Supplementary Notes 1 to 3 and whichis fixed to the main body portion provided therein with the temperaturemeasuring portion.

Supplementary Note 5

According to another aspect of the present disclosure, there is provideda substrate processing apparatus for accommodating a plurality ofsubstrates within a reaction tube and processing the substrates,including:

a heating part configured to heat an interior of the reaction tube; and

a thermocouple (temperature detection part) including a temperaturemeasuring portion configured to measure an internal temperature of thereaction tube, a main body portion provided therein with a wire whichconstitutes the temperature measuring portion, a cushioning portioninstalled in the main body portion at least in the vicinity of thetemperature measuring portion, and a protective member fixed at leastbetween the heating part and the temperature measuring portion whichfaces the heating part,

wherein the thermocouple is fixed to an outer surface of the reactiontube in a state in which the thermocouple makes contact with thereaction tube through the cushioning portion interposed between thereaction tube and the protective member when the protective member isfixed to the reaction tube.

Supplementary Note 6

In the apparatus of Supplementary Note 5, the temperature detection partmay be configured to include a protection tube connected to the mainbody portion under the temperature detection part and configured toprotect the wire, and an acquisition portion connected to the wire andconfigured to acquire the temperature measured by the temperaturemeasuring portion.

Supplementary Note 7

The apparatus of Supplementary Note 5 may further include:

a substrate holding member configured to horizontally hold thesubstrates in multiple stages,

wherein the protective member may be configured to cover at least asubstrate processing region where the substrates are held by thesubstrate holding member,

the heating part may include a plurality of independent heating zones (aU zone, a CU zone, a CL zone and an L zone), and

the protective member (cover) may be installed along the reaction tubeso as to cover at least one of the heating zones (the CU zone or the CLzone).

Supplementary Note 8

In the apparatus of Supplementary Note 5, a quartz-made fixing membermay be installed in a furnace opening portion formed in a lower portionof the reaction tube, and the thermocouple may be configured such thatthe protective member is fixed to the furnace opening portion throughthe fixing member.

Supplementary Note 9

In the apparatus of Supplementary Note 5 or 7, the heating part mayinclude a plurality of independent heating zones (a U zone, a CU zone, aCL zone and an L zone),

the temperature measuring portion may be installed in a number equal toor larger than the number of the heating zones, and

the apparatus may further include a control part configured to, based onthe temperature detected by the thermocouple, control at least theheating part so as to maintain the internal temperature of the reactiontube at a predetermined temperature.

Supplementary Note 10

The apparatus of Supplementary Note 5 may further include:

a process gas supply system configured to supply a process gas into thereaction tube; and

an exhaust system configured to exhaust an internal atmosphere of thereaction tube,

wherein the reaction tube may include: a cylinder portion having aclosed portion at an upper end thereof and an opening portion at a lowerend thereof; a gas supply area formed outside one sidewall of thecylinder portion and connected to the process gas supply system; and agas exhaust area formed outside the other sidewall of the cylinderportion, which is opposed to the gas supply area, and connected to theexhaust system.

Supplementary Note 11

According to another aspect of the present disclosure, there is provideda thermocouple, including:

a first main body portion installed on a ceiling of a reaction tube;

a second main body portion installed on a side surface of the reactiontube; and

a connection portion configured to interconnect the first main bodyportion and the second main body portion,

wherein the first main body portion includes a first temperaturemeasuring portion which measures a temperature of the ceiling of thereaction tube, and the first temperature measuring portion is fixed to acentral position of the reaction tube.

Supplementary Note 12

In the thermocouple of Supplementary Note 11, the second main bodyportion and the connection portion may be configured to accommodate atleast a wire which constitutes the first temperature measuring portion.

Supplementary Note 13

In the thermocouple of Supplementary Note 11, the second main bodyportion may include at least a second temperature measuring portionconfigured to detect a temperature of a side surface of the reactiontube and a cushioning portion installed in the vicinity of the secondtemperature measuring portion, and

the second temperature measuring portion may be fixed in a positionclose to an outer surface of the reaction tube, in a state in which thereaction tube and the second main body portion make contact with eachother through the cushioning portion.

Supplementary Note 14

According to another aspect of the present disclosure, there is provideda substrate processing apparatus for accommodating a substrate holdingmember, which holds a plurality of substrates, within a reaction tubeand processing the substrates, including:

a thermocouple including a first main body portion provided with a firsttemperature measuring portion, which measures an internal temperature ofthe reaction tube, and installed on a ceiling of the reaction tube, asecond main body portion installed on a side surface of the reactiontube, and a connection portion configured to interconnect the first mainbody portion and the second main body portion;

a heating part configured to heat an interior of the reaction tube; and

a ceiling cover installed between the heating part and the first mainbody portion facing the heating part, the ceiling cover having a spaceportion through which the first main body portion extends, the ceilingcover fixed to the ceiling of the reaction tube,

wherein the first temperature measuring portion is fixed in a centralposition of the ceiling cover by fitting a projection portion formed inthe first main body portion into an opening portion formed in theceiling cover.

Supplementary Note 15

In the apparatus of Supplementary Note 14, the heating part may includea plurality of independent heating zones (a U zone, a CU zone, a CL zoneand an L zone), and

the first temperature measuring portion may be configured to detect atemperature of the substrates disposed in a position facing the U zone.

Supplementary Note 16

The apparatus of Supplementary Note 15 may further include:

a full cover installed between the heating part and the reaction tubefacing the heating part, the full cover having a space portion throughwhich the second main body portion extends,

wherein the second main body portion may be fixed to an outer surface ofthe reaction tube when the full cover is fixed to the reaction tube.

Supplementary Note 17

In the apparatus of Supplementary Note 16, the second main body portionmay be configured such that when the second main body portion is fixedbetween the reaction tube and the full cover, the full cover is fittedto a fixing member installed on the reaction tube.

Supplementary Note 18

The apparatus of Supplementary Note 15 may further include:

a full cover installed between the heating part and the reaction tubefacing the heating part, the full cover having a space portion throughwhich the second main body portion extends,

wherein the second main body portion may include a second temperaturemeasuring portion protected by the full cover and a cushioning portionattached to the vicinity of the second temperature measuring portion,and

the second temperature measuring portion may be fixed in a positionclose to an outer surface of the reaction tube in a state in which thesecond temperature measuring portion makes contact with the reactiontube through the cushioning portion interposed between the reaction tubeand the full cover when the full cover is fixed to the reaction tube.

Supplementary Note 19

According to another aspect of the present disclosure, there is provideda substrate processing apparatus for accommodating a substrate holdingmember, which holds a plurality of substrates, within a reaction tubeand processing the substrates, including:

a first heating part configured to heat the substrates disposed inpositions facing a plurality of independent heating zones (a U zone, aCU zone, a CL zone and an L zone);

a second heating part installed on a ceiling of the reaction tube andconfigured to heat the substrates disposed at a position facing the Uzone;

a first thermocouple installed on a sidewall of the reaction tube andconfigured to detect a temperature of a position facing the firstheating part;

a second thermocouple including a first main body portion installed onthe ceiling of the reaction tube, a second main body portion installedon a side surface of the reaction tube, and a connection portionconfigured to interconnect the first main body portion and the secondmain body portion;

a full cover configured to fix the first thermocouple and the secondmain body portion to the sidewall of the reaction tube;

a ceiling cover configured to fix the first main body portion to theceiling of the reaction tube; and

a control part configured to, based on the temperatures detected by thefirst thermocouple and the second thermocouple, control at least thefirst heating part and the second heating part so as to maintain aninternal temperature of the reaction tube at a predeterminedtemperature.

Supplementary Note 20

In the apparatus of Supplementary Note 19, the first main body portionmay include a first temperature measuring portion configured to measurethe internal temperature of the reaction tube, and

the first temperature measuring portion may be fixed in a centralposition of the ceiling of the reaction tube by fitting a projectionportion attached to the first main body portion into an opening portionformed in the full cover, the first temperature measuring portionconfigured to measure a temperature of a center of the substrate heatedby the second heating part.

Supplementary Note 21

In the apparatus of Supplementary Note 19, the first main body portionmay include a first temperature measuring portion disposed at theceiling of the reaction tube and configured to measure the internaltemperature of the reaction tube,

the first thermocouple may include a second temperature measuringportion disposed at a position facing the heating zones (the U zone, theCU zone, the CL zone and the L zone) and configured to measure theinternal temperature of the reaction tube, and

the apparatus may be configured to, based on the temperatures detectedby the first temperature measuring portion and the second temperaturemeasuring portion, control at least the first heating part and thesecond heating part so as to maintain the internal temperature of thereaction tube at a predetermined temperature.

Supplementary Note 22

In the apparatus of Supplementary Note 19, the first main body portionmay include a first temperature measuring portion disposed at theceiling of the reaction tube and configured to measure the internaltemperature of the reaction tube,

the first thermocouple may include a second temperature measuringportion disposed in a position facing the U zone and configured tomeasure the internal temperature of the reaction tube, and

the apparatus may be configured to, based on the temperatures detectedby the first temperature measuring portion and the second temperaturemeasuring portion, control at least the first heating part and thesecond heating part so as to maintain the temperature of the substratesdisposed in the U zone at a predetermined temperature.

Supplementary Note 23

In the apparatus of Supplementary Note 22, the first temperaturemeasuring portion may be configured to detect a temperature of centersof the substrates disposed in the U zone,

the second temperature measuring portion may be configured to detect atemperature from edge portions of the substrates disposed in the U zone,and

the apparatus may be configured to maintain the temperature of thesubstrates disposed in the U zone at a predetermined temperature bycontrolling the first heating part and the second heating part so thatat least a difference between the temperatures detected by the firsttemperature measuring portion and the second temperature measuringportion falls within a predetermined range.

Supplementary Note 24

In the apparatus of Supplementary Note 23, the temperature of thesubstrate held at the uppermost side of the substrate holding memberamong the substrates disposed in the U zone may be maintained at thepredetermined temperature.

Supplementary Note 25

In the apparatus of Supplementary Note 22, the first temperaturemeasuring portion may be configured to detect a temperature of centersof the substrates disposed in the U zone,

the second temperature measuring portion may be configured to detect atemperature from edge portions of the substrates disposed in the heatingzones, and

the apparatus may be configured to maintain the temperature of thesubstrates disposed in the heating zones at a predetermined temperatureby controlling the first heating part and the second heating part sothat at least a difference between the temperatures detected by thefirst temperature measuring portion and the second temperature measuringportion installed in the U zone falls within a predetermined range.

Supplementary Note 26

In the apparatus of Supplementary Note 19, the full cover may be fittedto a fixing member installed on the reaction tube when firstthermocouple and the second main body portion are fixed to the reactiontube.

Supplementary Note 27

According to another aspect of the present disclosure, there is provideda substrate processing apparatus for accommodating a substrate holdingmember, which holds a plurality of substrates, within a reaction tubeand processing the substrates, including:

a heating part configured to heat an interior of the reaction tube;

a temperature detection part (thermocouple) configured to detect aninternal temperature of the reaction tube; and

a cover installed between the heating part and a temperature measuringportion facing the heating part

wherein the cover is fixed to the reaction tube in a state in which thethermocouple is installed, so that the thermocouple is fixed in a closeproximity to the reaction tube.

Supplementary Note 28

In the apparatus of Supplementary Note 27, the temperature measuringportion may be covered with a center of the cover when the thermocoupleis fixed between the reaction tube and the cover.

Supplementary Note 29

In the apparatus of Supplementary Note 28, at least a lower portion ofthe cover may be configured such that a thermal insulator is installedbetween the lower portion of the cover and the thermocouple.

Supplementary Note 30

According to another aspect of the present disclosure, there is provideda method of manufacturing a semiconductor device, including:

causing a substrate holding member to hold a plurality of substrates;

loading the substrate holding member into a reaction tube; and

processing the substrates, while controlling a heating part so as tomaintain an internal temperature of the reaction tube at a predeterminedtemperature, based on a temperature detected by a thermocouple,

wherein the thermocouple includes a temperature measuring portionconfigured to measure the internal temperature of the reaction tube, amain body portion provided therein with a wire which constitutes thetemperature measuring portion, and a cushioning portion attached to themain body portion at least in the vicinity of the temperature measuringportion, and

wherein the thermocouple is fixed to an outer surface of the reactiontube in a state in which the thermocouple makes contact with thereaction tube through the cushioning portion.

Supplementary Note 31

According to another aspect of the present disclosure, there is provideda program or a non-transitory computer-readable recording medium storingthe program, wherein the program is configured to cause a computer toperform:

causing a substrate holding member to hold a plurality of substrates;

loading the substrate holding member into a reaction tube; and

processing the substrates, while controlling a heating part so as tomaintain an internal temperature of the reaction tube at a predeterminedtemperature, based on a temperature detected by a thermocouple,

wherein the thermocouple includes a temperature measuring portionconfigured to measure the internal temperature of the reaction tube, amain body portion provided therein with a wire which constitutes thetemperature measuring portion, and a cushioning portion attached to themain body portion at least in the vicinity of the temperature measuringportion, and

wherein the thermocouple is fixed to an outer surface of the reactiontube in a state in which the thermocouple makes contact with thereaction tube through the cushioning portion.

According to the present disclosure in some embodiments, it is possibleto provide a configuration in which a thermocouple is disposed outside areaction tube.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosures. Indeed, the novel methods and apparatusesdescribed herein may be embodied in a variety of other forms;furthermore, various omissions, substitutions and changes in the form ofthe embodiments described herein may be made without departing from thespirit of the disclosures. The accompanying claims and their equivalentsare intended to cover such forms or modifications as would fall withinthe scope and spirit of the disclosures.

What is claimed is:
 1. A temperature sensor, comprising: a first mainbody portion, which is installed between a ceiling portion of a reactiontube and a first protective member including an opening portion,including: a first temperature measuring portion disposed on a firstside of the first main body portion in a longitudinal direction andconfigured to measure a temperature in the reaction tube; and apositioning portion installed on a second side of the first main bodyportion in the longitudinal direction to be spaced apart from the firsttemperature measuring portion and configured to dispose the firsttemperature measuring portion at a specific position with respect to thereaction tube; wherein the first main body portion is configured to bepositioned by the first protective member as the positioning portion isinserted into the opening portion.
 2. The temperature sensor of claim 1,wherein the first main body portion is configured to make contact with asurface of the ceiling portion.
 3. The temperature sensor of claim 1,wherein the first temperature measuring portion is configured to bedisposed at a central portion of the ceiling portion of the reactiontube by the positioning portion.
 4. The temperature sensor of claim 1,wherein the first protective member further includes at least a firstspace portion through which the first main body portion is passed. 5.The temperature sensor of claim 1, further comprising a second main bodyportion which is installed on a side surface of the reaction tube and inwhich a wire constituting the first temperature measuring portion isprovided, wherein the second main body portion is configured not toinclude a temperature measuring portion that detects a temperature of asubstrate.
 6. The temperature sensor of claim 5, further comprising aconnection portion configured to interconnect the first main bodyportion and the second main body portion, wherein the connection portionis configured to cover the wire with a member different from the firstmain body portion and the second main body portion.
 7. The temperaturesensor of claim 6, wherein the connection portion is configured to coverthe wire with an insulation member.
 8. The temperature sensor of claim1, wherein the positioning portion is installed to be spaced apart fromthe reaction tube farther than the first temperature measuring portion.9. The temperature sensor of claim 1, wherein the first protectivemember is configured to cover the first main body portion entirely. 10.A substrate processing apparatus comprising a temperature sensor thatincludes: a first main body portion, which is installed between aceiling portion of a reaction tube and a first protective memberincluding an opening portion, including: a first temperature measuringportion disposed on a first side of the first main body portion in alongitudinal direction and configured to measure a temperature in thereaction tube; and a positioning portion installed on a second side ofthe first main body portion in the longitudinal direction to be spacedapart from the first temperature measuring portion and configured todispose the first temperature measuring portion at a specific positionwith respect to the reaction tube; wherein the first main body portionis configured to be positioned by the first protective member as thepositioning portion is inserted into the opening portion.
 11. Theapparatus of claim 10, further comprising a first heater configured toheat, from a top of the reaction tube, a substrate which is disposed ata position facing a heating zone, which is positioned uppermost among aplurality of heating zones, wherein the first temperature measuringportion is configured to detect a temperature of the substrate heated bythe first heater.
 12. The apparatus of claim 10, wherein the firstprotective member is provided with a first fixing portion that fixes thefirst temperature measuring portion, and wherein the first fixingportion is configured to fix the first main body portion at a positiondisposed by the positioning portion.
 13. The apparatus of claim 10,wherein a thickness of the ceiling portion of the reaction tube isconfigured to be larger than a thickness of a sidewall of the reactiontube.
 14. The apparatus of claim 10, further comprising a second heaterconfigured to heat substrates disposed at a position facing a pluralityof heating zones, wherein the temperature sensor is configured toprovide a second main body portion which is installed at a positionfacing the second heater.
 15. The apparatus of claim 14, wherein thesecond main body portion is configured not to include a temperaturemeasuring portion that detects a temperature of the substrates.
 16. Theapparatus of claim 10, wherein the positioning portion is installed tobe spaced apart from the reaction tube farther than the firsttemperature measuring portion.
 17. The apparatus of claim 10, whereinthe first temperature measuring portion is disposed at a central portionof the ceiling portion of the reaction tube by the positioning portion,and the first main body portion is configured to make contact with asurface of the reaction tube.
 18. The apparatus of claim 10, wherein thefirst protective member is configured to cover the first main bodyportion entirely.
 19. The apparatus of claim 10, wherein the firstprotective member further includes a first space portion through whichthe first main body portion is passed.
 20. A method of manufacturing asemiconductor device comprising: processing a substrate whilemaintaining a temperature in a reaction tube at a predeterminedtemperature based on a temperature detected by a temperature sensor thatincludes: a first main body portion, which is installed between aceiling portion of the reaction tube and a first protective memberincluding an opening portion, including: a first temperature measuringportion disposed on a first side of the first main body portion in alongitudinal direction and configured to measure a temperature in thereaction tube; and a positioning portion installed on a second side ofthe first main body portion in the longitudinal direction to be spacedapart from the first temperature measuring portion and configured todispose the first temperature measuring portion at a specific positionwith respect to the reaction tube; wherein the first main body portionis configured to be positioned by the first protective member as thepositioning portion is inserted into the opening portion.